| 1 - 8 |
A comprehensive model on field-effect pnpn devices (Z(2)-FET)
Taur Y, Lacord J, Parihar MS, Wan J, Martinie S, Lee K, Bawedin M, Barbe JC, Cristoloveanu S |
| 9 - 18 |
High-performance and high-reliability SOT-6 packaged diplexer based on advanced IPD fabrication techniques
Qiang T, Wang C, Kim NY |
| 19 - 21 |
Room-temperature fabrication of a Ga-Sn-O thin-film transistor
Matsuda T, Takagi R, Umeda K, Kimura M |
| 22 - 29 |
High sensitivity pH sensing on the BEOL of industrial FDSOI transistors
Rahhal L, Ayele GT, Monfray S, Cloarec JP, Fornacciari B, Pardoux E, Chevalier C, Ecoffey S, Drouin D, Morin P, Garnier P, Boeuf F, Souifi A |
| 30 - 38 |
AlGaN/GaN-on-Si monolithic power-switching gate current booster
Han SW, Jo MG, Kim H, Cho CH, Cha HY |
| 39 - 45 |
Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate
Zhang ZL, Song L, Li WY, Fu K, Yu GH, Zhang XD, Fan YM, Deng XG, Li SM, Sun SC, Li XJ, Yuan J, Sun Q, Dong ZH, Cai Y, Zhang BS |
| 46 - 50 |
Nonlinear conductivity in silicon nitride
Tuncer E |
| 51 - 57 |
Feasibility study of current pulse induced 2-bit/4-state multilevel programming in phase-change memory
Liu Y, Fan X, Chen HP, Wang YQ, Liu B, Song ZT, Feng SL |
| 58 - 64 |
Endurance degradation and lifetime model of p-channel floating gate flash memory device with 2T structure
Wei JX, Liu SY, Liu XQ, Sun WF, Liu YW, Liu XH, Hou B |
| 65 - 73 |
Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1-1.5 THz
Jenabi S, Malekabadi A, Deslandes D, Boone F, Charlebois SA |
| 74 - 81 |
Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour
Jain P, Yadav C, Agarwal A, Chauhan YS |
