| 1 - 7 |
Impact of source/drain and bulk engineering on LFN performance of n- and p-MOSFET
Ioannidis EG, Rohracher K, Roger F, Pflanzl WC, Leisenberger FP, Wachmann E, Seebacher E, Vescoli V |
| 8 - 13 |
Design and analysis of different trigger techniques for ESD clamp circuit in 0.5-mu m 5 V/18 V CDMOS process
Zhang WJ, Yang L, Wang Y, Jin XL |
| 14 - 23 |
The signal-to-noise ratio and a hidden symmetry of Hall plates
Ausserlechner U |
| 24 - 30 |
Comparison of short-circuit characteristics of trench gate and planar gate U-shaped channel SOI-LIGBTs
Zhang L, Zhu J, Sun WF, Zhao MN, Huang XQ, Chen JJ, Shi LX, Chen J, Ding DS |
| 31 - 36 |
The investigations of characteristics of Sb2Te as a base phase-change material
Liu GY, Wu LC, Zhu M, Song ZT, Rao F, Song SN, Cheng Y |
| 37 - 42 |
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
Samnakay R, Balandin AA, Srinivasan P |
| 43 - 48 |
Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors
Estrada M, Hernandez-Barrios Y, Cerdeira A, Avila-Herrera F, Tinoco J, Moldovan O, Lime F, Iniguez B |
| 49 - 52 |
Fabrication and characterization of 395 nm ultraviolet GaN light-emitting diodes
Lin MP, Chen CJ, Shan LW, Wu MC |
| 53 - 64 |
A gate-width scalable 90-nm MOSFET nonlinear model including DC/RF dispersion effects valid up to 50 GHz
Yu PP, Sun L, Tian XN, Cheng JL, Gao JJ |
| 65 - 70 |
High frequency characteristic of a monolithic 500 degrees C OpAmp-RC integrator in SiC bipolar IC technology
Tian Y, Zetterling CM |
| 71 - 77 |
Monte Carlo modelling of Schottky diode for rectenna simulation
Bernuchon E, Aniel F, Zerounian N, Grimault-Jacquin AS |
| 78 - 84 |
High quality silicon-based substrates for microwave and millimeter wave passive circuits
Belaroussi Y, Rack M, Saadi AA, Scheen G, Belaroussi MT, Trabelsi M, Raskin JP |
| 85 - 93 |
Modeling and control of threshold voltage based on pull-in characteristic for micro self-locked switch
Deng JF, Hao YP, Liu SJ |
| 94 - 99 |
Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors
Lee S, Song Y, Park H, Zaslavsky A, Paine DC |
| 100 - 104 |
Monolithic integration of GMR sensors for standard CMOS-IC current sensing
De Marcellis A, Reig C, Cubells-Beltran MD, Madrenas J, Santos JD, Cardoso S, Freitas PP |
