Solid-State Electronics

Solid-State Electronics, Vol.138 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (21 articles)

1 - 2	Selected papers from the 7th IEEE International Nanoelectronics Conference (INEC 2016) and the 5th International Symposium on Next-Generation Electronics (ISNE 2016) Kok CW, Tam WS
3 - 15	Review on peculiar issues of field emission in vacuum nanoelectronic devices Filip V, Filip LD, Wong H
16 - 23	Permittivity and temperature effects on rectification performance of self-switching diodes with different geometrical structures using two-dimensional device simulator Zakaria NF, Kasjoo SR, Zailan Z, Isa MM, Taking S, Arshad MKM
24 - 29	Analytical modeling on the drain current characteristics of gate-all-around TFET with the incorporation of short-channel effects Xu WJ, Wong H, Iwai H, Liu J, Qin P
30 - 34	Design and fabrication of low power GaAs/AlAs resonant tunneling diodes Zawawi MAM, Missous M
35 - 39	Geometry and temperature effects on the threshold voltage characteristics of silicon nanowire MOS transistors Wong H, Yu QQ, Dong SR, Kakushima K, Iwai H
40 - 44	ALD Al2O3 passivation of L-g=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates Sun B, Chang HD, Wang SK, Niu JB, Liu HG
45 - 50	Charge transfer effect for the La0.7Ca0.3MnO3/NiO heterostructure and novel interfacial ferromagnetism Ning XK, Chen MJ, Wang SF, Fu GS
51 - 55	Coupled and decoupled on-chip solenoid inductors with nanogranular magnetic cores He YH, Wang L, Wang YC, Zhang HW, Peng DL, Bai FM
56 - 61	Enhanced tunability of electrical and magnetic properties in (La, Sr)MnO3 thin films via field-assisted oxygen vacancy modulation Wong HF, Ng SM, Cheng WF, Liu Y, Chen X, von Nordheim D, Mak CL, Dai JY, Ploss B, Leung CW
62 - 65	Effect of post-annealing on sputtered MoS2 films Wong WC, Ng SM, Wong HF, Cheng WF, Mak CL, Leung CW
66 - 72	Micro-patterning of resin-bonded NdFeB magnet for a fully integrated electromagnetic actuator Tao K, Wu J, Kottapalli AGP, Chen D, Yang ZQ, Ding GF, Lye SW, Miao JM
73 - 78	Ni antidot structure via single-step anodization of Al/Ni films Ng SM, Wong WC, Fang X, Ye H, Leung CW
79 - 83	Surface-dependent conductivity, transition type, and energy band structure in amorphous indium tin oxide films Wang YQ, Tang W
84 - 88	Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template Tsai CL, Liu HH, Chen JW, Lu CP, Ikenaga K, Tabuchi T, Matsumoto K, Fu YK
89 - 93	The opto-thermal effect on encapsulated cholesteric liquid crystals Liu YS, Lin HC, Yang KM
94 - 100	Piezoresistive microcantilever based lab-on-a-chip system for detection of macronutrients in the soil Patkar RS, Ashwin M, Rao VR
101 - 107	Enhanced gas sensing by 3D water steamed graphene hydrogel Wu J, Tao K, Miao JM, Norford LK
108 - 112	Synthesis of IGZO ink and study of ink-jet printed IGZO thin films with different Ga concentrations Shen YK, Liu Z, Wang XL, Ma WK, Chen ZH, Chen TP, Zhang HY
113 - 118	Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout Hsu HW, Lee CC
119 - 125	Use DAS algorithm to break through the device limitations of switched-capacitor-based DAC in an ADC consisting of pipelined SAR and TDC Fu ZY, Tang X, Pun KP