1 - 7 |
A terahertz performance of hybrid single walled CNT based amplifier with analytical approach Kumar S, Song H |
8 - 14 |
Modeling of thermal coupling in VO2-based oscillatory neural networks Velichko A, Belyaev M, Putrolaynen V, Perminov V, Pergament A |
15 - 20 |
Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method Lee BH, Han S, Lee SY |
21 - 30 |
Palladium (Pd) sensitized molybdenum trioxide (MoO3) nanobelts for nitrogen dioxide (NO2) gas detection Mane AA, Moholkar AV |
31 - 38 |
Accurate diode behavioral model with reverse recovery Banas S, Divin J, Dobes J, Panko V |
39 - 47 |
Design optimization and fabrication of a novel structural piezoresistive pressure sensor for micro-pressure measurement Li C, Cordovilla F, Ocana JL |
48 - 53 |
Investigation of surface PiN diodes for a novel reconfigurable antenna Su H, Hu HY, Zhang HM, Wang B, Kang HY, Wang Y, Hao MR |
54 - 59 |
The feasibility of using solution-processed aqueous La2O3 as effective hole injection layer in organic light-emitting diode Zhang Y, Li WS, Zhang T, Yang B, Zheng QH, Xu JW, Wang H, Wang LH, Zhang XW, Weic B |
60 - 68 |
A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation Kim TTH, Lee ZC, Do AT |
69 - 74 |
ESD robustness improving for the low-voltage triggering silicon-controlled rectifier by adding NWell at cathode Jin XL, Zheng YF, Wang Y, Guan JA, Hao SW, Li K, Luo J |
75 - 79 |
Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process Saleem AM, Andersson R, Desmaris V, Enoksson P |
80 - 87 |
Assessment of intrinsic small signal parameters of submicron SiC MESFETs Riaz M, Ahmed MM, Rafique U, Ahmed UF |
88 - 93 |
Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction Mohamad B, Leroux C, Reimbold G, Ghibaudo G |
94 - 100 |
MEMS fabrication and frequency sweep for suspending beam and plate electrode in electrostatic capacitor Zhu JX, Song WX |
101 - 108 |
Wigner transport simulation of (core gate) silicon-shell nanowire transistors in cylindrical coordinates Lee JH, Jeong WJ, Seo J, Shin M |
109 - 114 |
Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films Alcinkaya B, Sel K |
115 - 120 |
Effects of post-deposition annealing on sputtered SiO2/4H-SiC metal-oxide-semiconductor Lee S, Kim YS, Kang HJ, Kim H, Ha MW, Kim HJ |