Solid-State Electronics

Solid-State Electronics, Vol.140 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (27 articles)

1 - 1	Selected papers from The 24th Korean Conference on Semiconductors 2017 Preface Lee JH, Kim DH, Min YS, Cho SJ
2 - 7	Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment Kang WM, Lee S, Cho IT, Park TH, Shin H, Hwang CS, Lee C, Park BG, Lee JH
8 - 11	A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme Kim DY, Seok O, Park H, Bahng W, Kim HW, Park KC
12 - 17	Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures Kim ZS, Lee HS, Na J, Bae SB, Nam E, Lim JW
18 - 22	Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior Baek S, Lee J, Park I, Baek RH, Lee JS
23 - 28	Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics Kyoung S, Hong YS, Lee MH, Nam TJ
29 - 33	New modeling method for the dielectric relaxation of a DRAM cell capacitor Choi S, Sun W, Shin H
34 - 40	Integrated neuron circuit for implementing neuromorphic system with synaptic device Lee JJ, Park J, Kwon MW, Hwang S, Kim H, Park BG
41 - 45	Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET) Kim S, Kwon DW, Park E, Lee J, Lee R, Lee JH, Park BG
46 - 50	Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation Kim DB, Kwon DW, Kim S, Lee SH, Park BG
51 - 54	Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p(+)-Si memory device Kim TH, Kim S, Kim H, Kim MH, Bang S, Cho S, Park BG
55 - 58	Read margin analysis of crossbar arrays using the cell-variability-aware simulation method Sun W, Choi S, Shin H
59 - 63	GIDL analysis of the process variation effect in gate-all-around nanowire FET Kim S, Seo Y, Lee J, Kang M, Shin H
64 - 68	Comparison of dual-k spacer and single-k spacer for single NWFET and 3-stack NWFET Ko H, Kim J, Kim M, Kang M, Shin H
69 - 73	Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM Seo Y, Kim S, Ko K, Woo C, Kim M, Lee J, Kang M, Shin H
74 - 79	Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability Ko K, Son D, Kang M, Shin H
80 - 85	Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors Jung H, Choi S, Jang JT, Yoon J, Lee J, Lee Y, Rhee J, Ahn G, Yu HR, Kim DM, Choi SJ, Kim DH
86 - 89	TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing Shan F, Kim SJ
90 - 95	The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress Rhee J, Choi S, Kang H, Kim JY, Ko D, Ahn G, Jung H, Choi SJ, Kim DM, Kim DH
96 - 99	Sensing properties of separative paper-based extended-gate ion-sensitive field-effect transistor for cost effective pH sensor applications Cho WJ, Lim CM
100 - 108	Lab-on-a-chip based total-phosphorus analysis device utilizing a photocatalytic reaction Jung DG, Jung D, Kong SH
109 - 114	Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors Jang J, Choi S, Kim J, Park TJ, Park BG, Kim DM, Choi SJ, Lee SM, Kim DH, Mo HS
115 - 121	Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices Jang JT, Ko D, Choi S, Kang H, Kim JY, Yu HR, Ahn G, Jung H, Rhee J, Lee H, Choi SJ, Kim DM, Kim DH
122 - 128	Resistive switching characteristics of solution-processed Al-Zn-Sn-O films annealed by microwave irradiation Kim TW, Baek IJ, Cho WJ
129 - 133	Resistive switching characteristics of solution-processed organic-inorganic blended films for flexible memory applications Baek IJ, Cho WJ
134 - 138	High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer Lim JG, Yang SD, Yun HJ, Jung JK, Park JH, Lim C, Cho GS, Park SG, Huh C, Lee HD, Lee GW
139 - 143	Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications Jang JT, Ko D, Ahn G, Yu HR, Jung H, Kim YS, Yoon C, Lee S, Park BH, Choi SJ, Kim DM, Kim DH