Solid-State Electronics

Solid-State Electronics, Vol.141 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (14 articles)

1 - 6	Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs Upadhyay BB, Takhar K, Jha J, Ganguly S, Saha D
7 - 12	Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching Son DH, Jo YW, Won CH, Lee JH, Seo JH, Lee SH, Lim JW, Kim JH, Kang IM, Cristoloveanu S, Lee JH
13 - 17	Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics Wang HY, Wang JY, Liu JQ, He YD, Wang MJ, Yu M, Wu WG
18 - 22	Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash Zhang Y, Jin L, Jiang DD, Zou XQ, Zhao ZG, Gao J, Zeng M, Zhou WB, Tang ZY, Huo ZL
23 - 30	A drain current model for amorphous InGaZnO thin film transistors considering temperature effects Cai MX, Yao RH
31 - 39	Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation Graef M, Hosenfeld F, Horst F, Farokhnejad A, Hain F, Iniguez B, Kloes A
40 - 49	Thermal coupling and effect of subharmonic synchronization in a system of two VO2 based oscillators Velichko A, Belyaev M, Putrolaynen V, Perminov V, Pergament A
50 - 57	Improve the performance of CZTSSe solar cells by applying a SnS BSF layer Omrani MK, Minbashi M, Memarian N, Kim DH
58 - 64	Solution processed thin film transistor from liquid phase exfoliated MoS2 flakes Zeng XL, Hirwa H, Metel S, Nicolosi V, Wagner V
65 - 68	Enhanced transconductance in a double-gate graphene field-effect transistor Hwang BW, Yeom HI, Kim D, Kim CK, Lee D, Choi YK
69 - 73	X-band T/R switch with body-floating multi-gate PDSOI NMOS transistors Park M, Min BW
74 - 83	Distributed parameter modeling to prevent charge cancellation for discrete thickness piezoelectric energy harvester Krishnasamy M, Qian F, Zuo L, Lenka TR
84 - 91	Electrical characterization of vertically stacked p-FET SOI nanowires Paz BC, Casse M, Barraud S, Reimbold G, Vinet M, Faynot O, Pavanello MA
92 - 95	Series resistance in different operation regime of junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G