| 1 - 7 |
Application of CTLM method combining interfacial structure characterization to investigate contact formation of silver paste metallization on crystalline silicon solar cells
Xiong SH, Yuan X, Tong H, Yang YX, Liu C, Ye XJ, Li YS, Wang XH, Luo L |
| 8 - 13 |
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
Malik A, Sharma C, Laishram R, Bag RK, Rawal DS, Vinayak S, Sharma RK |
| 14 - 19 |
Lifetime prediction of InGaZnO thin film transistor for the application of display device and BEOL-transistors
Kim SM, Cho WJ, Yu CG, Park JT |
| 20 - 24 |
Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors
Chae HJ, Seok KH, Lee SK, Joo SK |
| 25 - 30 |
Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport
Oproglidis TA, Karatsori TA, Barraud S, Ghibaudo G, Dimitriadis CA |
| 31 - 35 |
Narrowing of band gap at source/drain contact scheme of nanoscale InAs-nMOS
Mohamed AH, Oxland R, Aldegunde M, Hepplestone SP, Sushko PV, Kalna K |
| 36 - 40 |
Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al(2)O3 surface passivation
Asif M, Chen C, Peng D, Xi W, Zhi J |
| 41 - 46 |
Impulse response measurement in the HgCdTe avalanche photodiode
Singh A, Pal R |
| 47 - 51 |
SOI MESFETs on high-resistivity, trap-rich substrates
Mehr P, Zhang X, Lepkowski W, Li CJ, Thornton TJ |
| 52 - 55 |
Resistive RAMs as analog trimming elements
Aziza H, Perez A, Portal JM |
| 56 - 61 |
Solution-processed flexible NiO resistive random access memory device
Kim SJ, Lee H, Hong SH |
