Solid-State Electronics

Solid-State Electronics, Vol.144 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (18 articles)

1 - 6	Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte Guo JJ, Xie DD, Yang BC, Jiang J
7 - 12	Hybrid solar cells composed of perovskite and polymer photovoltaic structures Phaometvarithorn A, Chuangchote S, Kumnorkaew P, Wootthikanokkhan J
13 - 16	A new high-kappa Al2O3 based metal-insulator-metal antifuse Tian M, Zhong HC, Li L, Wang ZG
17 - 21	Contacting graphene in a 200 mm wafer silicon technology environment Lisker M, Lukosius M, Kitzmann J, Fraschke M, Wolansky D, Schulze S, Lupina G, Mai A
22 - 27	Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique Qiang L, Liang XC, Cai GS, Pei YL, Yao RH, Wang G
28 - 32	Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer Fan CL, Lin WC, Chen HW
33 - 38	A new approach to the extraction of single exponential diode model parameters Ortiz-Conde A, Garcia-Sanchez FJ
39 - 48	The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes Karabulut A, Orak I, Turut A
49 - 53	Circular electrodes to reduce the current variation of OTFTs with the drop-casted semiconducting layer Kabir HMD, Ahmed Z, Kariyadan R, Zhang LN, Chan MS
54 - 59	Modeling of an 8-12 GHz receiver front-end based on an in-line MEMS frequency discriminator Chu CL, Liao XP
60 - 66	Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N-2 plasma surface treatment Liu H, Zhang ZJ, Luo WJ
67 - 72	A charge-based model of Junction Barrier Schottky rectifiers Latorre-Rey AD, Mudholkar M, Quddus MT, Salih A
73 - 77	Performance analysis and simulation of vertical gallium nitride nanowire transistors Witzigmann B, Yu F, Frank K, Strempel K, Fatahilah MF, Schumacher HW, Wasisto HS, Romer F, Waag A
78 - 85	New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube (TM) integration Llorente CD, Le Royer C, Batude P, Fenouillet-Beranger C, Martinie S, Lu CMV, Allain F, Colinge JP, Cristoloveanu S, Ghibaudo G, Vinet M
86 - 89	Graphene/black phosphorus heterostructured photodetector Xu J, Song YJ, Park JH, Lee S
90 - 94	Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene Heidler J, Yang S, Feng XL, Mullen K, Asadi K
95 - 100	Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination Cho YJ, Kim WS, Lee YH, Park JK, Kim GT, Kim O
101 - 105	Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes Matthus CD, Huerner A, Erlbacher T, Bauer AJ, Frey L