| 1 - 7 |
Low voltage operation of GaN vertical nanowire MOSFET
Son DH, Jo YW, Seo JH, Won CH, Im KS, Lee YS, Jang HS, Kim DH, Kang IM, Lee JH |
| 8 - 18 |
Numerical modeling of reverse recovery characteristic in silicon pin diodes
Yamashita Y, Tadano H |
| 19 - 28 |
Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements
Pradeep K, Poiroux T, Scheer P, Juge A, Gouget G, Ghibaudo G |
| 29 - 33 |
Tunable-Sensitivity flexible pressure sensor based on graphene transparent electrode
Luo S, Yang J, Song XF, Zhou X, Yu LY, Sun T, Yu CS, Huang DP, Du CL, Wei DP |
| 34 - 39 |
Hot-carrier-induced current capability degradation and optimization for lateral IGBT on thick SOI substrate
Zhang CW, Li Y, Yue WJ, Fu XQ, Li ZM |
| 40 - 45 |
Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs
Zhu H, Meng X, Zheng X, Yang Y, Feng SW, Zhang YM, Guo CS |
| 46 - 48 |
Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film
Liang DD, Li XP, Wang JS, Wu LC, Chen P |
| 49 - 53 |
Effect of traps on the charge transport in semiconducting polymer PCDTBT
Khan MT, Agrawal V, Almohammedi A, Gupt V |
| 54 - 57 |
Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors
Jian LY, Lee HY, Lin YH, Lee CT |
