| 1 - 8 |
A novel empirical I-V model for GaN HEMTs
Yang J, Jia YT, Ye N, Gao S |
| 9 - 12 |
High speed terahertz modulator based on the single channel AlGaN/GaN high electron mobility transistor
Zhang XY, Xing YY, Zhang Q, Gu YP, Su Y, Ma CL |
| 13 - 20 |
Ionic conduction and unipolar resistance switching in delta-phase Bi2O3 thin films
Jiang J, Lim DG, Ramadoss K, Ramanathan S |
| 21 - 27 |
Terahertz response of a field-effect transistor loaded with a reactive component
Mammeri AM, Mahi FZ, Marinchio H, Palermo C, Varani L |
| 28 - 33 |
Research of the SPiN diodes for silicon-based reconfigurable holographic antenna
Su H, Hu HY, Shu B, Wang B, Wang W, Wang JX |
| 34 - 38 |
Theoretical analysis of the charge collection at a nano-Schottky contact
El Hdiy A |
| 39 - 43 |
Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory
Liao JH, Ko ZJ, Lin YM, Lin HJ, Hsieh JY, Yang LW, Yang T, Chen KC, Lu CY |
| 44 - 49 |
Investigation of nonlinear distortion in double heterojunction GaAs based pHEMT subject to frequency and temperature
Alim MA, Ali MM, Rezazadeh AA |
| 50 - 65 |
Digital and analog TFET circuits: Design and benchmark
Strangio S, Settino F, Palestri P, Lanuzza M, Crupi F, Esseni D, Selmi L |
