| 1 - 5 |
Ti/Al/Ti/TiW Au-free low temperature ohmic contacts for un-doped AlGaN/GaN HEMTs
Li QX, Zhou QB, Gao S, Liu XY, Wang H |
| 6 - 12 |
Enlarged memory margins for resistive switching devices based on polyurethane film due to embedded Ag nanoparticles
Liu L, Lu KL, Yan D, Zhang JZ, Ma C, Jia ZQ, Wang W, Zhao EM |
| 13 - 18 |
Device behaviour and zero temperature coefficients analysis for microwave GaAs HEMT
Alim MA, Rezazadeh AA |
| 19 - 25 |
Effect of MgO doping on the BiVO4 sensing electrode performance for YSZ-based potentiometric ammonia sensor
Wang C, Xu JL, Yang B, Xia F, Zhu YW, Xiao JZ |
| 26 - 34 |
Analytical modeling of metal gate granularity based threshold voltage variability in NWFET
Vardhan PH, Mittal S, Ganguly S, Ganguly U |
| 35 - 38 |
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Zheng X, Feng SW, Zhang YM, Jia YP |
| 39 - 43 |
Lumped-element model of plasmonic solar cells
Kim CH, Seitanidou M, Jin JW, Bonnassieux Y, Horowitz G, Vangelidis I, Lidorikis E, Laskarakis A, Logothetidis S |
| 44 - 50 |
A review on terahertz photogalvanic spectroscopy of Bi2Te3- and Sb2Te3-based three dimensional topological insulators
Plank H, Ganichev SD |
| 51 - 57 |
Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics
Chen BW, Yu EK, Chang TC, Kanicki J |
| 58 - 62 |
Stepper-based L-g=0.5 mu m In0.52Al0.48As/In0.7Ga0.3As PHEMTs on a 3-inch InP substrate with record product of f(T) and L-g
Baek JM, Son SW, Park JH, Park JK, Kwak JG, Yoon J, Bang DS, Lee JH, Kim T, Kim DH |
| 63 - 77 |
System-level read disturb suppression techniques of TLC NAND flash memories for Read-Hot/Cold data mixed applications
Watanabe H, Deguchi Y, Kobayashi A, Matsui C, Takeuchi K |
