Solid-State Electronics

Solid-State Electronics, Vol.148 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (11 articles)

1 - 6	Electrical characterization studies and doping effects of rubidium carbonate in organic layer by admittance spectroscopy Li MC, Tsai CT, Liu YH, Kao PC, Chu SY
7 - 15	Experimenting and modeling of catastrophic failure in electromigration-induced resistance degradation for deep submicron dual-damascene copper interconnects Adhikari A, Roy A
16 - 19	A triboelectric nanogenerator based on polypropylene carbonate and photoacid generator Zhu ZY, Xia KQ, Xu ZW, Zhang HZ
20 - 26	Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress Park J, Jang KS, Shin DG, Shin M, Yi JS
27 - 34	Design and fabrication of very small MEMS microphone with silicon diaphragm supported by Z-shape arms using SOI wafer Ganji BA, Sedaghat SB, Roncaglia A, Belsito L
35 - 42	Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer Jung JG, Lee K, Lee B, Lee HS
43 - 50	A novel charge recycle read write assist technique for energy efficient and fast 20 nm 8T-SRAM array Nayak D, Acharya DP, Rout PK, NandA U
51 - 57	Investigation of avalanche ruggedness of 650 V Schottky-barrier rectifiers Konstantinov A, Pham H, Lee B, Park KS, Kang B, Allerstam F, Neyer T
58 - 62	Photoconduction mechanism of ultra-long indium oxide nanowires Mazouchi M, Sarkar K, Purahmad M, Farid S, Dutta M
63 - 69	Memory performance of MOS structure embedded with laser annealed gold NCs Kastanis L, Spear JL, Sargentis C, Konofaos N, Tsamakis D, Koutsogeorgis DC, Evangelou EK
70 - 74	SJ-MOSFET with wave-type field limiting ring for high di/dt robustness of body diode reverse recovery Tong X, Liu SY, Sun WF, Yang LL, Xu ZY, Wu QX, Zhang XS, Wu JH, Yang Z, Li ZQ, Zhu YZ