Solid-State Electronics

Solid-State Electronics, Vol.149 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (11 articles)

1 - 5	Al2O3 thin film multilayer structure for application in RRAM devices Rodrigues AN, Santos YP, Rodrigues CL, Macedo MA
6 - 14	Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires Razavi P, Greer JC
15 - 22	Analyses of current-voltage characteristics using derivative methodology Wang WF, Cheng KY, Wu MC, Hsieh KC
23 - 31	Accurate semi empirical predictive model for doped and undoped double gate MOSFET Cabre R, Muhea WE, Iniguez B
32 - 37	An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior Hernandez-Barrios Y, Cerdeira A, Estrada M, Iniguez B
38 - 45	Flicker modeling scheme of liquid crystal displays based on current leakage without information about TFT parameters Kim D, Song SJ, Lee JH, Koh JH, Kim H, Lee SY, Lee GS, Nam H
46 - 51	Numerical simulation of planar BaSi2 based Schottky junction solar cells toward high efficiency Chen L, Chen H, Deng QR, Wang GM, Wang SG
52 - 56	Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2 Jung WS, Lim D, Han H, Sokolov AS, Jeon YR, Choi C
57 - 61	Analytical expressions for subthreshold swing in FDSOI MOS structures Ghibaudo G, Pananakakis G
62 - 70	Methodology to separate channel conductions of two level vertically stacked SOI nanowire MOSFETs Paz BC, Casse M, Barraud S, Reimbold G, Vinet M, Faynot O, Pavanello MA
71 - 77	Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs Palumbo F, Aguirre FL, Pazos SM, Krylov I, Winter R, Eizenberg M