| 1 - 7 |
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors - Physical interpretation of transport phenomena
Nafaa B, Cretu B, Ismail N, Touayar O, Carin R, Simoen E, Veloso A |
| 8 - 15 |
Low-voltage electric-double-layer MoS2 transistor gated via water solution
Guo JJ, Jiang J, Yang BC |
| 16 - 22 |
A tunnel FET compact model including non-idealities with verilog implementation
Sajjad RN, Radhakrishna U, Antoniadis DA |
| 23 - 27 |
Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O-2 plasma treatment
Knobelspies S, Takabayashi A, Daus A, Cantarella G, Munzenrieder N, Troster G |
| 28 - 34 |
Design, fabrication and characterization of SAW devices on LiNbO3 bulk and ZnO thin film substrates
Hu MK, Li Duan F |
| 35 - 40 |
Introduction of lithography-compatible conducting polymer as flexible electrode for oxide-based charge-trap memory transistors on plastic poly (ethylene naphthalate) substrates
Yang JH, Yun DJ, Kim SM, Kim DK, Yoon MH, Kim GH, Yoon SM |
| 41 - 44 |
Parasitic engineering for RRAM control
Shrestha PR, Nminibapiel DM, Veksler D, Campbell JP, Ryan JT, Baumgart H, Cheung KP |
| 45 - 50 |
A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model
Zhang A, Gao JJ |
| 51 - 59 |
Impact of the post-thermal annealing on OFETs using printed contacts, printed organic gate insulator and evaporated C-60 active layer
Tao Z, Mohammed-Brahim T, Lei W, Harnois M, Jacques E |
| 60 - 65 |
Gradual switching and self-rectifying characteristics of Cu/alpha-IGZO/p(+)-Si RRAM for synaptic device application
Bang S, Kim MH, Kim TH, Lee DK, Kim S, Cho S, Park BG |
