| 1 - 5 |
A simple multistep etched termination technique for 4H-SiC GTO thyristors
Li ZG, Zhou K, Zhang L, Xu XL, Li LH, Li JT, Dai G |
| 6 - 10 |
Power reduction for recovery of a FinFET by electrothermal annealing
Han JK, Park JY, Choi YK |
| 11 - 17 |
Process optimization and device variation of Mg-doped ZnO FBARs
Duan FL, Yang Z, Ji ZL, Weng HT, Xie ZY, Shen A, Mi SJ, Chen X, Chen YG, Liu QH |
| 18 - 22 |
Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells
Nicosia G, Goda A, Spinelli AS, Compagnoni CM |
| 23 - 26 |
Scattering mechanisms in In0.7Ga0.3As/In0.52Al0.48As quantum-well metal-oxidesemiconductor field-effect transistors
George SM, Son SW, Lee JH, Kim TW, Kim DH |
| 27 - 35 |
Carbon nanotube Schottky type photodetectors for UV applications
Filatzikioti A, Glezos N, Kantarelou V, Kyriakis A, Pilatos G, Romanos G, Speliotis T, Stathopoulou DJ |
| 36 - 39 |
Low frequency noise investigation of n-MOSFET single cells for memory applications
Ioannidis EG, Leisenberger FP, Enichlmair H |
| 40 - 46 |
Multifunctional graphene sensor for detection of environment signals using a decoupling technique
Lee J, Lee CJ, Kang J, Park H, Kim J, Choi M, Park H |
| 47 - 51 |
Demonstration of a 9 kV reverse breakdown and 59 m Omega-cm(2) specific on-resistance AlGaN/GaN Schottky barrier diode
Colon A, Douglas EA, Pope AJ, Klein BA, Stephenson CA, Van Heukelom MS, Tauke-Pedretti A, Baca AG |
| 52 - 59 |
A compact model and TCAD simulation for GaN-gate injection transistor (GIT)
Garcia F, Shamsir S, Islam SK |
| 60 - 64 |
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface
Chen DB, Wan LJ, Li J, Liu ZK, Li GQ |
