Solid-State Electronics

Solid-State Electronics, Vol.153 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (17 articles)

1 - 7	DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors Ramirez-Garcia E, Garduno-Nolasco E, Rodriguez-Mendez LM, Diaz-Albarran LM, Valdez-Perez D, Galaz-Larios MC, Aniel F, Zerounian N, Enciso-Aguilar MA
8 - 11	Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory Lee S, Song J, Lim S, Chekol SA, Hwang H
12 - 15	Experimental observation of zero DIBL in short-channel hysteresis-free ferroelectric-gated FinFET Shin J, Shin C
16 - 22	Lightweight flexible indium-free oxide TFTs with AND logic function employing chitosan biopolymer as self-supporting layer Feng GD, Zhao YH, Jiang J
23 - 26	Bias-stress effects in diF-TES-ADT field-effect transistors Kim CH
27 - 32	Gas sensing characteristics of the FET-type gas sensor having inkjet-printed WS2 sensing layer Jeong Y, Shin J, Hong Y, Wu ML, Hong S, Kwon KC, Choi S, Lee T, Jang HW, Lee JH
33 - 36	Optimization of PFN thickness in inverted high-performance PTB7:PC70BM solar cells Resendiz L, Balderrama VS, Lastra G, Ramirez M, Cabrera V, Estrada M
37 - 45	Efficient bimetallic nanoparticles embedded-porous silicon CO gas sensor Alwan AM, Hashim DA, Jawad MF
46 - 51	Improved efficiency of organic light emitting devices using graphene oxide with optimized thickness as hole injection layer Guo YY, Wang WJ, Li SH, Liu YL, Liu TT, Wang QL, Wang QR, Gao XX, Fan QL, Li WL
52 - 58	Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD Khosa RY, Chen JT, Palsson K, Karhu R, Hassan J, Rorsman N, Sveinbjornsson EO
59 - 66	Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits Matsuura K, Tanimoto Y, Saito A, Miyaoku Y, Mizoguchi T, Miura-Mattausch M, Mattausch HJ
67 - 73	The influence of grain boundary interface traps on electrical characteristics of top select gate transistor in 3D NAND flash memory Zou XQ, Jin L, Yan L, Zhang Y, Ai D, Zhao CL, Xu F, Li CL, Huo ZL
74 - 78	Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience Dong CY, Xu JN, Zhou Y, Zhang Y, Xie HT
79 - 83	Hardware implementation of neural network using pre-programmed resistive device for pattern recognition Choi W, Moon K, Kwak M, Sung C, Lee J, Song J, Park J, Chekol SA, Hwang H
84 - 87	Multifactor lithographic process conditions of 3D single mode waveguide fabrication Kong HS, Kang KS
88 - 92	A Sub-35 pW Axon-Hillock artificial neuron circuit Danneville F, Loyez C, Carpentier K, Sourikopoulos I, Mercier E, Cappy A
93 - 98	Investigation on the change of the performance of Si-Zn-Sn-O thin film transistors under negative bias temperature stress depending on the channel thickness Hwang JY, Lee SY