| 1 - 6 |
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
Lim D, Han H, Choi C |
| 7 - 11 |
A macro model of RF Schottky diode in 22-nm CMOS and its application
Xu C, Yu PP, Jiang YF |
| 12 - 15 |
Experimental validation of the surface state distribution model in the Suzuki theory to qualify the thin film surface materials
Pichon L, Yang K, Salaun AC |
| 16 - 19 |
Reconfigurable logic for carry-out computing in 1-bit full adder using a single magnetic tunnel junction
Bae GY, Hwang Y, Lee S, Kim T, Park W |
| 20 - 23 |
Silicon-based high-integration reconfigurable dipole with SPiN
Su H, Hu HY, Mousavi P, Zhang HM, Wang B, Miao YH |
| 24 - 30 |
Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model
Trojman L, Ragnarsson LA, Collaert N |
| 31 - 35 |
Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation
Lee DK, Kim MH, Kim TH, Bang S, Choi YJ, Kim S, Cho S, Park BG |
| 36 - 42 |
On the C-V characteristics of nanoscale strained gate-all-around Si/SiGe MOSFETs
Kumari A, Kumar S, Sharma TK, Das MK |
| 43 - 49 |
High concentration phosphorus doping in Ge for CMOS-integrated laser applications
Park CH, Yako M, Wada K, Ishikawa Y, Ahn D |
