Solid-State Electronics

Solid-State Electronics, Vol.155 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

1 - 3	Preface to the FTM-2018 special issue Preface Luryi S, Xu JM, Zaslavsky A
4 - 6	When will we have a quantum computer? Dyakonov MI
7 - 19	NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration Ahopelto J, Ardila G, Baldi L, Balestra F, Belot D, Fagas G, De Gendt S, Demarchi D, Fernandez-Bolanos M, Holden D, Ionescu AM, Meneghesso G, Mocuta A, Pfeffer M, Popp RM, Sangiorgi E, Torres CMS
20 - 26	Lithography for now and the future van de Kerkhof MA, Benschop JPH, Banine VY
27 - 31	Challenges for high performance and very low power operation at the end of the Roadmap Balestra F
32 - 43	The concept of electrostatic doping and related devices Cristoloveanu S, Lee KH, Park H, Parihar MS
44 - 48	Sub-terahertz testing of millimeter wave Monolithic and very large scale integrated circuits Shur M, Rudin S, Rupper G, Reed M, Suarez J
49 - 56	Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM Sverdlov V, Makarov A, Selberherr S
57 - 64	Monitoring large-scale power distribution grids Gavrilov D, Gouzman M, Luryi S
65 - 75	Wide band gap semiconductor technology: State-of-the-art Shur M
76 - 81	Low voltage operation of GaN vertical nanowire MOSFET Son DH, Lee JH, Kim JG, Im KS, Lee JH
82 - 92	Analog neuromorphic computing using programmable resistor arrays Solomon PM
93 - 98	Nanoelectronics with proximitized materials Zutic I, Matos-Abiague A, Scharf B, Zhou T, Dery H, Belashchenko K
99 - 104	Exploiting topological matter for Majorana physics and devices Schuffelgen P, Schmitt T, Schleenvoigt M, Rosenbach D, Perla P, Jalil AR, Mussler G, Lepsa M, Schapers T, Grutzmacher D
105 - 110	Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals Szulakowska L, Bieniek M, Hawrylak P
111 - 116	Signatures of induced superconductivity in AlOx-capped topological heterostructures Schuffelgen P, Rosenbach D, Pang Y, Kampmeier J, Luysberg M, Kibkalo L, Mussler G, Veldhuis D, Brinkman A, Lu L, Schapers T, Grutzmacher D
117 - 122	Possible observation of Berry phase in Aharonov Bohm rings of InGaAs Aharony A, Entin-Wohlman O, Tzarfati LH, Hevroni R, Karpovski M, Shelukhin V, Umansky V, Palevski A
123 - 128	Characteristics of vertically stacked graphene-layer infrared photodetectors Ryzhii M, Otsuji T, Karasik VE, Leiman V, Shur MS, Ryzhii V, Mitin V
129 - 138	Room temperature yellow InGaAlP quantum dot laser Ledentsov NN, Shchukin VA, Shernyakov YM, Kulagina MM, Payusov AS, Gordeev NY, Maximov MV, Zhukov AE, Karachinsky LY, Denneulin T, Cherkashin N
139 - 143	Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters von den Driesch N, Stange D, Rainko D, Breuer U, Capellini G, Hartmann JM, Sigg H, Mantl S, Grutzmacher D, Buca D
144 - 149	Resonant amplification via Er-doped clad Si photonic molecules: Towards compact low-loss/high-Q Si photonic devices Jarschel PF, Frateschi NC
150 - 158	Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 degrees C Ledentsov N, Agustin M, Shchukin VA, Kropp JR, Ledentsov NN, Chorchos L, Turkiewicz JP, Khan Z, Cheng CL, Shi JW, Cherkashin N
159 - 162	Plasmonic modulation and demodulation structure for the future optical WDM devices in communication system Sukharenko V, Dorsinville R, Mynbaev D