| 1 - 11 |
TCAD models of the ballistic mobility in the source-to-drain tunneling regime
Schenk A, Aguirre P |
| 12 - 19 |
Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
Kutsuki K, Watanabe Y, Yamashita Y, Soejima N, Kataoka K, Onishi T, Yamamoto K, Fujiwara H |
| 20 - 24 |
Enhanced plasmonic rectification of terahertz radiation in spatially periodic graphene structures towards the charge neutrality point
Fateev DV, Mashinsky KV, Sun JD, Popov VV |
| 25 - 33 |
Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits
Gonzalez-Cordero G, Pedro M, Martin-Martinez J, Gonzalez MB, Jimenez-Molinos F, Campabadal F, Nafria N, Roldan JB |
| 34 - 41 |
Design methodology for graphene tunable filters at the sub-millimeter-wave frequencies
Ilic AZ, Bukvic BM, Budimir D, Ilic MM |
| 42 - 47 |
SnO2 nanoparticles/TiO2 nanofibers heterostructures: In situ fabrication and enhanced gas sensing performance
Chen KQ, Chen SJ, Pi MY, Zhang DK |
| 48 - 54 |
Investigation of Mo:Na and Mo related back contacts for the application in Cu(In,Ga)Se-2 thin film solar cells
Zhu H, Dong Z, Pan L, Han Q, Niu X, Li J, Shen K, Mai Y, Li Y, Wan M |
| 55 - 60 |
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
Yao JN, Lin YC, Lin MS, Huang TJ, Hsu HT, Sze SM, Chang EY |
