Solid-State Electronics

Solid-State Electronics, Vol.70 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (17 articles)

1 - 2	Selected Full-Length Papers from the EUROSOI 2011 Conference Foreword Godoy A, Gamiz F
3 - 7	Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect Chena CH, Kuo JB, Chen D, Yeh CS
8 - 13	Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region Cortes I, Toulon G, Morancho F, Flores D, Hugonnard-Bruyere E, Villard B
14 - 19	LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties Lotfi S, Li LG, Vallin O, Vestling L, Norstrom H, Olsson J
20 - 26	Low frequency noise characterization in n-channel FinFETs Talmat R, Achour H, Cretu B, Routoure JM, Benfdila A, Carin R, Collaert N, Mercha A, Simoen E, Claeys C
27 - 32	Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique Valenza M, Husseini JE, Martinez F, Bawedin M, Le Royer C, Damlencourt JF
33 - 38	CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors Wessely F, Krauss T, Schwalke U
39 - 43	Analysis of temperature variation influence on the analog performance of 45 degrees rotated triple-gate nMuGFETs Pavanello MA, de Souza M, Martino JA, Simoen E, Claeys C
44 - 49	GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics Galeti M, Rodrigues M, Martino JA, Collaert N, Simoen E, Claeys C
50 - 58	Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit Kilchytska V, Arshad MKM, Makovejev S, Olsen S, Andrieu F, Poiroux T, Faynot O, Raskin JP, Flandre D
59 - 66	FinFlash with buried storage ONO layer for flash memory application Chang SJ, Bawedin ML, Xiong W, Lee JH, Lee JH, Cristoloveanu S
67 - 72	An analysis on the ambipolar current in Si double-gate tunnel FETs Hraziia, Vladimirescu A, Amara A, Anghel C
73 - 80	Subband engineering in n-type silicon nanowires using strain and confinement Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H
81 - 91	Confinement-induced carrier mobility increase in nanowires by quantization of warped bands Neophytou N, Kosina H
92 - 100	Influence of discrete dopant on quantum transport in silicon nanowire transistors Akhavan ND, Ferain I, Yu R, Razavi P, Colinge JP
101 - 105	Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization Sampedro C, Gamiz F, Donetti L, Godoy A
106 - 113	Quantum simulation of an ultrathin body field-effect transistor with channel imperfections Vyurkov V, Semenikhin I, Filippov S, Orlikovsky A