Solid-State Electronics

Solid-State Electronics, Vol.80 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (24 articles)

1 - 4	Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1-xN/GaN HEMTs Peng MZ, Zheng YK, Ge Q, Wei K, Liu XY
5 - 9	HfO2 nanocrystal memory on SiGe channel Lin YH, Chien CH
10 - 13	Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation Baek CK, Kang D, Kim J, Jin B, Rim T, Park S, Meyyappan M, Jeong YH, Lee JS
14 - 18	Structural spectral response tuning in organic deep ultraviolet photodetectors Zhu L, Wang WS, Yao ZG, Zhang XQ, Wang YS
19 - 22	Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA
23 - 27	Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs Goswami A, Trew RJ, Bilbro GL
28 - 32	A simple compact model for long-channel junctionless Double Gate MOSFETs Lime F, Santana E, Iniguez B
33 - 37	Optoelectronic properties of cauliflower like ZnO-ZnO nanorod/p-Si heterostructure Rajabi M, Dariani RS, Zad AI, Zahedi F
38 - 44	Analysis of the electrical characteristics of 600 V-Class electron irradiated fast recovery Superjunction VDMOS Zhu J, Zhang L, Sun WF, Qian QS, Ma WL, Yang Z, Lu SL
45 - 54	Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes Manifacier JC
55 - 58	Characterization of DC, analog/RF, and low frequency noise in silicon-on-insulator nMOSFETs with different body-contact structures Yang R, Qian H, Li JF, Xiong YZ, Shi JL, Loh WY, Yu MB, Lo PGQ, Balasubramanian N, Kwong DL
59 - 62	Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies Chang HY, Chopra S, Adams B, Li JP, Sharma S, Kim Y, Moffatt S, Woo JCS
63 - 66	Spin polarized hole transport in poly(2-methoxy, 5-(2-ethylhexyloxy)-1,4-phenylenevinylene) Shukla M, Kumar P
67 - 71	Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs Sensale-Rodriguez B, Guo J, Wang RH, Verma J, Li GW, Fang T, Beam E, Ketterson A, Schuette M, Saunier P, Gao X, Guo SP, Snider G, Fay P, Jena D, Xing HG
72 - 75	Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs Lee MH, Tai CW, Huang JJ
76 - 80	Analysis and reduction of the gate forward leakage current in AlGaN/GaN HEMTs employing energy-band modulation technology Chen WJ, Zhang J, Zhang B, Li ZJ
81 - 95	A comprehensive review on microwave FinFET modeling for progressing beyond the state of art Crupi G, Schreurs DMMP, Raskin JP, Caddemi A
96 - 104	Modelling of MWIR HgCdTe complementary barrier HOT detector Martyniuk P, Rogalski A
105 - 109	A solution to reducing insertion loss and achieving high sidelobe rejection for wavelet transform and reconstruction processor using SAW devices Jiang H, Lu WK, Zhang GA, Xie ZG
110 - 117	Diffusion formation of nickel suicide contacts in SiNWs Beregovsky M, Katsman A, Hajaj EM, Yaish YE
118 - 123	IGBT scaling principle toward CMOS compatible wafer processes Tanaka M, Omura I
124 - 134	k.p based closed form energy band gap and transport electron effective mass model for [100] and [110] relaxed and strained Silicon nanowire Ghosh RK, Bhattacharya S, Mahapatra S
135 - 141	Low-temperature electrical characterization of junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
142 - 151	Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions Godet C, Fadjie-Djomkam AB, Ababou-Girard S