| 1 - 7 |
Behavior of the parameters of microcrystalline silicon TFTs under mechanical strain
Janfaoui S, Simon C, Coulon N, Mohammed-Brahim T |
| 8 - 14 |
Investigation of voltage-controlled oscillator circuits using organic thin-film transistors (OTFT) for use in VCO-based analog-to-digital converters
Ganesan R, Krumm J, Ludwig K, Glesner M |
| 15 - 20 |
Research on efficiency droop mechanism and improvement in AlGaInP Ultra-High-Brightness LEDs using the transient measurement method
Huang CF, Su YF, Lin CB, Chiang KN |
| 21 - 26 |
A novel model of the high-voltage VDMOS for the circuit simulation
Liu SY, Zhu RX, Jia K, Huang D, Sun WF, Zhang CW |
| 27 - 39 |
An injection efficiency model to characterize the injection capability and turn-off speed for > 10 kV 4H-SiC IGBTs
Lee MC, Huang AQ |
| 40 - 42 |
Planar GaAs nanowire tri-gate MOSFETs by vapor-liquid-solid growth
Zhang C, Li XL |
| 43 - 48 |
Analytical and numerical model of spiral inductors on high resistivity silicon substrates
Mallik K, Abuelgasim A, Hashim N, Ashburn P, de Groot CH |
| 49 - 55 |
Threshold voltage extraction in Tunnel FETs
Ortiz-Conde A, Garcia-Sanchez FJ, Muci J, Sucre-Gonzalez A, Martino JA, Agopian PGD, Claeys C |
| 56 - 60 |
Influence of the oxide-semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
Palumbo F, Shekhter P, Eizenberg M |
| 61 - 65 |
Modeling of boron diffusion in silicon-germanium alloys using Kinetic Monte Carlo
Dopico I, Castrillo P, Martin-Bragado I |
| 66 - 66 |
Controlled growth, patterning and placement of carbon nanotube thin films (vol 54, pg 1204, 2010)
Sangwan VK, Ballarotto VW, Hines DR, Fuhrer MS, Williams ED |
