| 1 - 8 |
An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs
Ghosh S, Bag A, Jana SK, Mukhopadhyay P, Dinara SM, Kabi S, Biswas D |
| 9 - 13 |
Proton irradiation effects on InGaP/GaAs single heterojunction bipolar transistors
Liu M, Zhang YM, Lu HL, Zhang YM, Zhang JC, Wei ZC, Li CH |
| 14 - 18 |
Effect of In addition and annealing temperature on the device performance of solution-processed In-Zn-Sn-O thin film transistors
Kim MH, Lee HS |
| 19 - 21 |
Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates
Moon SW, Twynam J, Lee J, Seo D, Jung S, Choi HG, Shim H, Yim JS, Roh SD |
| 22 - 26 |
Low-frequency noise and effective trap density of short channel p- and n-types junctionless nanowire transistors
Doria RT, Trevisoli R, de Souza M, Pavanello MA |
| 27 - 33 |
Investigation of process-induced performance variability and optimization of the 10 nm technology node Si bulk FinFETs
Baek RH, Kang CY, Sohn CW, Kim DM, Kirsch P |
| 34 - 37 |
Trans-capacitance modeling in junctionless gate-all-around nanowire FETs
Jazaeri F, Barbut L, Sallese JM |
| 38 - 43 |
Analysis on the off-state design and characterization of LIGBTs in partial SOI technology
Tee EKC, Antoniou M, Udrea F, Hoelke A, Ng LY, Abidin WABZ, Pilkington SJ, Pal DK |
| 44 - 47 |
1/f noise in forward biased high voltage 4H-SiC Schottky diodes
Shabunina EI, Levinshtein ME, Shmidt NM, Ivanov PA, Palmour JW |
