Solid-State Electronics

Solid-State Electronics, Vol.99 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (19 articles)

1 - 6	Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS Gelczuk L, Kamyczek P, Placzek-Popko E, Dabrowska-Szata M
7 - 10	Enhancement-mode L-g=50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with f(max) surpassing 408 GHz Li M, Tang CW, Li H, Lau KM
11 - 15	On the effect of quantum barrier thickness in the active region of nitride-based light emitting diodes Wang CK, Chiou YZ, Chang SJ, Chang CY, Chiang TH, Lin TK, Li XQ
16 - 20	Operation mechanism investigation of electrochromic display devices using tungsten oxides based on solid-state metal-oxide-metal capacitor structures Cheng CP, Kuo Y, Cheng CH, Zheng ZW
21 - 24	Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer Liou JK, Chen CC, Chou PC, Tsai TY, Cheng SY, Liu WC
25 - 30	High-kappa insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors Colon A, Shi JX
31 - 37	A behavioral model for MCT surge current analysis in pulse discharge Chen WJ, Sun RZ, Xiao K, Zhu HZ, Peng CF, Ruan ZY, Ruan JX, Zhang B, Li ZJ
38 - 40	Extraction of second harmonic from the In0.53Ga0.47As planar Gunn diode using radial stub resonators Maricar MI, Khalid A, Glover J, Evans GA, Vasileious P, Li C, Cumming D, Oxley CH
41 - 44	Self heating in Si0.5Ge0.5/Si and GaAs/Si thin film device structures Zheng H, Jagannadham K
45 - 50	Planarized ambipolar a-SiGe:H thin-film transistors: Influence of the sequence of fabrication process Dominguez M, Rosales P, Torres A, Flores F, Molina J, Moreno M, Luna J, Orduna A
51 - 54	Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage Hsu HH, Cheng CH, Chiou P, Chiu YC, Chang CY, Zheng ZW
55 - 58	Lower activation energy in organic field effect transistors with carbon nanotube contacts Sarker BK, Khondaker SI
59 - 64	Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure Wang QP, Jiang Y, Miyashita T, Motoyama S, Li LA, Wang DJ, Ohno Y, Ao JP
65 - 77	2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs Schwarz M, Kloes A
78 - 83	Investigation on the effect of tunnel oxide nitridation to threshold voltage instability mechanisms of nanoscale CT NVM Lee MC, Wong HY, Lee L
84 - 92	Low temperature acetone detection by p-type nano-titania thin film: Equivalent circuit model and sensing mechanism Bhowmik B, Dutta K, Hazra A, Bhattacharyya P
93 - 100	Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model Bazigos A, Ayala CL, Rana S, Grogg D, Fernandez-Bolanos M, Hagleitner C, Qin T, Pamunuwa D, Ionescu AM
101 - 103	Growth and characterization of UTC photo-diodes containing GaAs1-xBix absorber layer Geizutis A, Pacebutas V, Butkute R, Svidovsky P, Strazdiene V, Krotkus A
104 - 107	Full split C-V method for parameter extraction in ultra thin BOX FDSOI MOS devices Shin MJ, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G