Solid-State Electronics

Solid-State Electronics, Vol.49, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (21 articles)

3 - 7	Synthesis and characterization of copper doped zinc telluride thin films John VS, Mahalingam T, Chu JP
9 - 17	Improved characterization methods for unipolar directly bonded semiconductor junctions Stuchinsky VA, Kamaev GN, Khoroshilov KY
19 - 24	Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT Kang IH, Kim JH, Kim WB, Song JI
25 - 30	An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film Wu ZH, Lai PT, Li B, Kwok PCK, Liu BY, Zheng XR
31 - 36	Effects of strain and growth direction on the hall factor in n-type semiconductors Park I, Chun SK
37 - 41	AlGaInP light emitting diode with a current-blocking structure Wang HC, Su YK, Chung YH, Lin CL, Chen WB, Chen SM
43 - 48	A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs Yang WW, Cheng XH, Yu YH, Song ZR, Shen DS
49 - 55	Measurement of bulk and rear recombination components and application to solar cells with an Al back layer Lago-Aurrekoetxea R, del Canizo C, Tobias I, Luque A
57 - 61	Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics He YD, Xu MZ, Tan CH
63 - 66	A novel voltage-controlled oscillator realized with a microresonator Han JQ, Zhu CC, Shi YS, Liu JH, He YN
67 - 72	Dynamic threshold voltage MOS in partially depleted SOI technology: a wide frequency band analysis Dehan M, Raskin JP
73 - 76	Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts Knoch J, Mantl S, Appenzeller J
77 - 84	Modeling of non-uniform heat generation in LDMOS transistors Roig J, Flores D, Urresti J, Hidalgo S, Rebollo J
85 - 95	Unified current equation for predictive modeling of submicron MOSFETs Kloes A
97 - 107	An analytical retention model for SONOS nonvolatile memory devices in the excess electron state Wang Y, White MH
109 - 116	SOI technology characterization using SOI-MOS capacitor Sonnenberg V, Martino JA
117 - 122	High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current Tut T, Biyikli N, Kimukin I, Kartaloglu T, Aytur O, Unlu MS, Ozbay E
123 - 129	Non-destructive parameters extraction for IGBT spice model and compared with measurements Yuan SC
131 - 135	Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantation Kim SD, Park CM, Woo JCS
137 - 139	Segregation coefficient of impurities at polycrystalline Si/HfO2 interfaces Suzuki K, Minakata H, Sakota T, Yamaguchi M, Tamura Y
141 - 143	Modified boundary condition at Si-SiO2 interface for modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's Jit S, Pandey P, Kumar A, Gupta SK