Solid-State Electronics

Solid-State Electronics, Vol.51, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (26 articles)

1 - 5	200 GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers Li JC, Lao ZH, Chen MY, Rajavel RD, Thomas S, Bui SS, Shi BQ, Guinn KV, Duvall JR, Hitko DA, Chow DH, Sokolich M
6 - 15	A review of energy bandgap engineering in III-V semiconductor alloys for mid-infrared laser applications Yin Z, Tang XH
16 - 37	Low-frequency noise in silicon-on-insulator devices and technologies Simoen E, Mercha A, Claey C, Lukyanchikova N
38 - 47	Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures Morrison GB, Raring JW, Wang CS, Skogen EJ, Chang YC, Sysak M, Coldren LA
48 - 56	An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter Djeffal F, Chahdi M, Benhaya A, Hafiane ML
57 - 63	Depletion-mode In0.53Ga0.47As-channel MOSFET utilizing a liquid phase oxidized InGaAs gate Kang SJ, Jo SJ, Han JC, Kim JH, Park SW, Song JI
64 - 68	Structure design criteria of dual-channel high mobility electron transistors Lin JC, Chen YC, Tsai WC, Yang PY
69 - 76	A monolithic integrated 4 x 4 tin oxide gas sensor array with on-chip multiplexing and differential readout circuits Guo G, Bermak A, Chan PCH, Yan GZ
77 - 80	Improved carrier mobility for pentacene TFT by NH3 annealing of gate dielectric Kwan MC, Cheng KH, Lai PT, Che CM
81 - 84	Synthesis and luminescence properties of manganese-doped ZnS nanocrystals Tripathi B, Vijay YK, Wate S, Singh F, Avasthi DK
85 - 89	Room temperature photoluminescence evaluation of In0.29Al0.7As/In0.3Ga0.7As/GaAsmetamorphic high electron mobility transistor structures Shang XZ, Wu J, Wang WC, Wang WX, Huang Q, Zhou JM
90 - 93	The impact of post gate annealing on noise performance of AlGaN/GaN microwave HEMTs Liu D, Lee J, Lu W
94 - 101	Si-based metal-semiconductor-metal photodetectors with various design modifications Li M, Anderson WA
102 - 110	Trapping in deep defects under substrate hot electron stress in TIN/Hf-silicate based gate stacks Chowdhury NA, Srinivasan P, Misra D
111 - 114	Enhanced current efficiency in organic light-emitting devices using 4,4'-N,N'-dicarbazole-biphenyl as hole-buffer layer Yang HS, Me W, Zhao Y, Hou JY, Liu SY
115 - 122	Precession trajectories of the hole spin in zinc-blende semiconductors Dargys A
123 - 129	Electrical transport properties characterization of PVK (poly N-vinyl carbazole) for electrolumine scent devices applications D'Angelo P, Barra M, CassineSe A, Maglione MG, Vacca P, Minarini C, Rubino A
130 - 135	Polarization dependent analysis of AlGaN/GaN HEMT for high power applications Gangwani P, Pandey S, HaIdar S, Gupta M, Gupta RS
136 - 141	Conserved flux in interband tunneling Beresford R
142 - 146	The peak and average temperature in a self-heated GaNHFET McAlister SP
147 - 158	Parasitic memory effects in shallow-trench-isolated nanocrystal memory devices Dimitrakis P, Normand P
159 - 163	Static and dynamic electrical study of a-SiC : H based p-i-n structure, effect of hydrogen dilution of the intrinsic layer Abdelkrim M, Loulou M, Gharbi R, Fathallah M, Pirri CF, Tresso E
164 - 169	Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors Evangelou EK, Mavrou G, DimoulaS A, Konofaos N
170 - 178	Threshold voltage and bulk inversion effects in nonclassical CMOS devices with undoped ultra-thin bodies Trivedi VP, Fossum JG, Zhang WM
179 - 185	An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration He J, Bian W, Tao YD, Liu F, Lu KL, Wit W, Wang T, Chan M
186 - 186	Comments on'Modeling MOSFET surface capacitance behavior under non-equilibrium' (vol 50, pg 259, 2006) He J, Zhang X, Wang YY