Solid-State Electronics

Solid-State Electronics, Vol.59, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (11 articles)

1 - 1	PAPERS SELECTED FROM THE EUROSOI 2010 CONFERENCE Foreword Clerc R, Faynot O
2 - 7	High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs Le Royer C, Damlencourt JF, Vincent B, Romanjek K, Le Cunff Y, Grampeix H, Mazzocchi V, Carron V, Nemouchi F, Hartmann JM, Arvet C, Vizioz C, Tabone C, Hutin L, Batude P, Vinet M
8 - 12	Fully depleted silicon on insulator MOSFETs on (110) surface for hybrid orientation technologies Signamarcheix T, Andrieu F, Biasse B, Casse M, Papon AM, Nolot E, Ghyselen B, Faynot O, Clavelier L
13 - 17	Impact of SEG on uniaxially strained MuGFET performance Agopian PGD, Pacheco VH, Martino JA, Simoen E, Claeys C
18 - 24	Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs Kilchytska V, Alvarado J, Collaert N, Rooyackers R, Put S, Simoen E, Claeys C, Flandre D
25 - 33	Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs Van Den Daele W, Le Royer C, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S
34 - 38	Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise Valenza M, Gyani J, Martinez F, Soliveres S, Le Royer C, Augendre E, Clavelier L
39 - 43	Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance Park KH, Cristoloveanu S, Bawedin M, Bae Y, Na KI, Lee JH
44 - 49	Capacitor-less A-RAM SOI memory: Principles, scaling and expected performance Rodriguez N, Cristoloveanu S, Gamiz F
50 - 61	Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current Afzalian A, Colinge JP, Flandre D
62 - 67	Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs Ruiz FG, Tienda-Luna IM, Godoy A, Sampedro C, Gamiz F, Donetti L