Solid-State Electronics

Solid-State Electronics, Vol.60, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (26 articles)

1 - 1	PAPERS SELECTED FROM THE 5TH INTERNATIONAL SiGe TECHNOLOGY AND DEVICES MEETING (ISTDM 2010) Foreword Ostling M, Malm BG, Radamson HH
2 - 6	Low threading dislocation density Ge deposited on Si (100) using RPCVD Yamamoto Y, Zaumseil P, Arguirov T, Kittler M, Tillack B
7 - 12	Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth Kurosawa M, Toko K, Kawabata N, Sadoh T, Miyao M
13 - 17	Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD Skibitzki O, Yamamoto Y, Schubert MA, Weidner G, Tillack B
18 - 21	Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth Ohta Y, Tanaka T, Toko K, Sadoh T, Miyao M
22 - 25	Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds Sakane T, Toko K, Tanaka T, Sadoh T, Miyao M
26 - 30	X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(001) substrates Ebihara K, Kikkawa J, Nakamura Y, Sakai A, Wang G, Caymax M, Imai Y, Kimura S, Sakata O
31 - 36	Study of Arsenic ion implantation of patterned strained Si NWs Minamisawa RA, Habicht S, Knoll L, Zhao QT, Buca D, Mantl S, Kohler F, Carius R
37 - 41	Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs Hsieh BF, Chang ST
42 - 45	Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity Liu XC, Myronov M, Dobbie A, Nguyen V, Leadley DR
46 - 52	Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems Nishimura T, Nakatsuka O, Shimura Y, Takeuchi S, Vincent B, Vantomme A, Dekoster J, Caymax M, Loo R, Zaima S
53 - 57	Ge1-xSnx stressors for strained-Ge CMOS Takeuchi S, Shimura Y, Nishimura T, Vincent B, Eneman G, Clarysse T, Demeulemeester J, Vantomme A, Dekoster J, Caymax M, Loo R, Sakai A, Nakatsuka O, Zaima S
58 - 64	Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress Dinh TV, Hong SM, Jungemann C
65 - 69	High-density formation of Ge quantum dots on SiO2 Makihara K, Ikeda M, Ohta A, Takeuchi S, Shimura Y, Zaima S, Miyazaki S
70 - 74	Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen Kato K, Kondo H, Sakashita M, Nakatsuka O, Zaima S
75 - 83	Integration of MOSFETs with SiGe dots as stressor material Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E
84 - 88	Control of strain relaxation behavior of Ge1-xSnx buffer layers Shimura Y, Takeuchi S, Nakatsuka O, Sakai A, Zaima S
89 - 92	Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs Moriyama Y, Kamimuta Y, Ikeda K, Tezuka T
93 - 99	Double-polysilicon SiGe HBT architecture with lateral base link Fox A, Heinemann B, Rucker H
100 - 104	SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays Andersson JY, Ericsson P, Radamson HH, Wissmar SGE, Kolandouz M
105 - 111	Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells Kaschel M, Schmid M, Oehme M, Werner J, Schulze J
112 - 115	Fabrication of high-Ge-fraction strained Si1-xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers Takahashi K, Sakuraba M, Murota J
116 - 121	Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions Vincent B, Loo R, Vandervorst W, Delmotte J, Douhard B, Valev VK, Vanbel M, Verbiest T, Rip J, Brijs B, Conard T, Claypool C, Takeuchi S, Zaima S, Mitard J, De Jaeger B, Dekoster J, Caymax M
122 - 127	Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering Hirayama K, Yoshino K, Ueno R, Iwamura Y, Yang HG, Wang D, Nakashima H
128 - 133	Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing Yang HG, Iyota M, Ikeura S, Wang D, Nakashima H
134 - 138	Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate Reichel C, Kronholz S, Kammler T, Zeun A, Beernink G