Solid-State Electronics

Solid-State Electronics, Vol.64, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (15 articles)

1 - 5	Enhancement of electrical properties in pentacene-based thin-film transistors using a lithium fluoride modification layer Chou DW, Lin YJ, Wei-Chin JH, Li YC, Wang YH
6 - 9	Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer Lai MH, Wu YS
10 - 13	A novel 3-TFT voltage driving method of compensating V-TH shift for a-Si:H TFT and OLED degradation for AMOLED Lin CL, Chou KW, Chang FC, Hung CC
14 - 17	Trench superjunction VDMOS with charge imbalance cells Sun WF, Zhu J, Qian QS, Cao PF, Liu SY, Su Z, Lu SL, Shi LX
18 - 27	Proposal of preliminary device model and scaling scheme of cross-current tetrode SOI MOSFET aiming at low-energy circuit applications Omura Y, Azuma Y, Yoshioka Y, Fukuchi K, Ino D
28 - 33	Investigation on the thermal behavior of microwave GaN HEMTs Crupi G, Avolio G, Raffo A, Barmuta P, Schreurs DMMP, Caddemi A, Vannini G
34 - 41	Analytical unified threshold voltage model of short-channel FinFETs and implementation Fasarakis N, Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Papathanasiou K, Jomaah J, Ghibaudo G
42 - 46	Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application Yun JG, Cho S, Park BG
47 - 53	InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J
54 - 56	Detailed study about influence of oxygen on trap properties in SiOxNy by the thermally stimulated current and maximum entropy method Yonamoto Y, Inaba Y, Akamatsu N
57 - 62	A THz-range planar NDR device utilizing ballistic electron acceleration in GaN Aslan B, Eastman LF
63 - 66	14.2 W/mm internally-matched AlGaN/GaN HEMT for X-band applications Peng MZ, Zheng YK, Luo WJ, Liu XY
67 - 72	Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications Li C, Khalid A, Caldwell SHP, Holland MC, Dunn GM, Thayne IG, Cumming DRS
73 - 77	Four-point probe characterization of 4H silicon carbide Chandra N, Sharma V, Chung GY, Schroder DK
78 - 84	An analytical compact model for Schottky-barrier double gate MOSFETs Balaguer M, Iniguez B, Roldan JB