Solid-State Electronics

Solid-State Electronics, Vol.67, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (18 articles)

1 - 5	Dynamic switching characteristic dependence on sidewall angle for phase change memory Long XM, Miao XS, Sun JJ, Cheng XM, Tong H, Li Y, Yang DH, Huang JD, Liu C
6 - 10	Stable field emission from planar-gate electron source with MWNTs by electrophoretic deposition Zhang YA, Lin JY, Wu CX, Li FS, Guo TL
11 - 16	Inverter circuits on glass substrates based on ZnO-nanoparticle thin-film transistors Wolff K, Hilleringmann U
17 - 22	Fully depleted double-gate MSDRAM cell with additional nonvolatile functionality Park KH, Bawedin M, Lee JH, Bae YH, Na KI, Lee JH, Cristoloveanu S
23 - 26	High-density NiSi nanocrystals embedded in Al2O3/SiO2 double-barrier for robust retention of nonvolatile memory Ren JL, Li B, Zheng JG, Liu JL
27 - 29	Influence of ionic Bismuth on intrinsic defects in ZnO varistors Huan C, Gang F
30 - 37	Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation Balaguer M, Roldan JB, Donetti L, Gamiz F
38 - 44	Polarization retention and switching in ferroelectric nanocapacitors with defects on tensile substrates Misirlioglu IB, Yildiz M
45 - 52	Calculation and analysis of thermal impedance of microelectronic structures from analytical models Vintrou S, Laraqi N, Bairi A
53 - 62	A physics-based, small-signal model for graphene field effect transistors Champlain JG
63 - 69	Lateral power-monitoring photodiode monolithically integrated into 1.3 mu m GaInAsP laser Yang CD, Lei PH
70 - 73	The effects of the surface morphology of poly(3,4-ethylenedioxythiophene) electrodes on the growth of pentacene, and the electrical performance of the bottom contact pentacene transistor Kim H, Jeong K, Yu CJ, Nam HS, Soh H, Lee J
74 - 78	Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Cico K, Gregusova D, Kuzmik J, Jurkovic M, Alexewicz A, Poisson MAD, Pogany D, Strasser G, Delage S, Frohlich K
79 - 89	BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations Venugopalan S, Lu DD, Kawakami Y, Lee PM, Niknejad AM, Hu CM
90 - 93	Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics Hahn H, Achenbach J, Ketteniss N, Noculak A, Kalisch H, Vescan A
94 - 99	Engineering the current-voltage characteristics of metal-insulator-metal diodes using double-insulator tunnel barriers Grover S, Moddel G
100 - 104	Silicon based on-chip antenna using an LC resonator for near-field RF systems Okabe K, Lee W, Harada Y, Ishida M
105 - 108	High-frequency, 6.2 angstrom pN heterojunction diodes Champlain JG, Magno R, Park D, Newman HS, Boos JB