Solid-State Electronics

Solid-State Electronics, Vol.45, No.10 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

1705 - 1716	A physical compact model for direct tunneling from NMOS inversion layers Clerc R, O'Sullivan P, McCarthy KG, Ghibaudo G, Pananakakis G, Mathewson A
1717 - 1723	A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique Mahapatra S, Rao VR, Vasi J, Cheng B, Woo JCS
1725 - 1732	A two dimensional analytical model for the current distribution in a lateral IGBT Henkel I, Feiler W, Kostka A
1733 - 1741	Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors Luo B, Ip K, Ren F, Lee KP, Abernathy CR, Pearton SJ, Mackenzie KD
1743 - 1746	Properties of HgCdTe crystals passivated by A(2)B(6) layers Virt I, Bilyk M, Stefaniuk I, Kuzma M
1747 - 1751	High-concentration diffusion profiles of low-energy ion-implanted B, As and BF2 in bulk silicon Suzuki K
1753 - 1761	Non-local microscopic view of signal propagation times in BJTs biased up to high currents Palestri P, Selmi L
1763 - 1771	Design considerations for buried p-layers to suppress substrate-trapping effects in GaAs MESFETs Kunihiro K, Ohno Y
1773 - 1785	Modeling of time dependence of hole current and prediction of Q(BD) and t(BD) for thin gate MOS devices based upon anode hole injection Quddus MT, DeMassa TA, Schroder DK, Sanchez JJ
1787 - 1791	Determination of the Fowler-Nordheim tunneling parameters from the Fowler-Nordheim plot Chiou YL, Gambino JP, Mohammad M
1793 - 1798	Hall effect measurements in double-gate SOI MOSFETs Vandooren A, Cristoloveanu S, Flandre D, Colinge JP
1799 - 1803	MOSFET triggering silicon controlled rectifiers for electrostatic discharge protection circuits Jang SL, Li SH
1805 - 1808	On the structure of the recessed-channel MOSFET for sub-100 nm SiCMOS Tao M, Varahramyan K
1809 - 1813	The n+n combined structure gas sensor based on burnable gases Wang YD, Wu XH, Li YF, Zhou ZL
1815 - 1819	Voltage dependence of photocurrent in metal-semiconductor-metal structures under front-illuminated conditions Niemcharoen S, Kobayashi K, Kimura M, Sato K
1821 - 1826	Dynamic behavior of scaled microdisk lasers Thiyagarajan SMK, Levi AFJ
1827 - 1830	Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection Kahn M, Lasri J, Orenstein M, Ritter D, Eisenstein G
1831 - 1835	Growth and characterization of InGaAs/InAlAs quantum cascade lasers Liu FQ, Zhang QS, Zhang YZ, Ding D, Xu B, Wang ZG
1837 - 1842	Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes Kent DG, Lee KP, Zhang AP, Luo B, Overberg ME, Abernathy CR, Ren F, Mackenzie KD, Pearton SJ, Nakagawa Y
1843 - 1845	Implication of non-ideality of coupling capacitors in the performance of multistage amplifiers Fahmi MME, El Ahl AMHS, Mohammad SN
1847 - 1850	Lateral current spreading in SiC Schottky diodes using metal overlap edge termination Zhang Q, Sudarshan TS
1851 - 1857	Design considerations for 25 nm MOSFET devices Saha S
1859 - 1865	Investigation of degeneracy of current-voltage characteristics of asymmetrical IGBT with n-buffer layer concentration Khanna VK, Kumar A, Sood SC, Gupta RP, Jasuja KL, Maj B, Kostka A