1251 - 1251 |
Editorial for the special issue with publications of NGC2007 papers Goodnick S, Korkin A, Naito T, Peyghambarian N, Chadha M |
1252 - 1262 |
Innovating SOI memory devices based on floating-body effects Bawedin M, CristoloveanU S, Flandre D |
1263 - 1277 |
Theory-inspired nano-engineering of photonic and electronic materials: Noncentro symmetric charge-transfer electro-optic materials Dalton LR, Sullivan PA, Bale DH, Bricht BC |
1278 - 1286 |
Photonic crystal waveguide modulators for silicon photonics: Device physics and some recent progress Jiang W, Gu L, Chen X, Chen RT |
1287 - 1300 |
Dynamically modulated tunneling for multipurpose electron devices: Application to THz frequency multiplication Oriols X, Alarcon A, Baella L |
1301 - 1307 |
Reconfigurable threshold logic gates with nanoscale DG-MOSFETs Kaya S, Harned HFA, Ting DT, Creech G |
1308 - 1318 |
Chemical self-organization length scales in non- and nano-crystalline thin films Lucovsky G, Phillips JC |
1319 - 1327 |
Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter Otsuji T, Meziani YM, Hanabe M, Nishimura T, Sano E |
1328 - 1337 |
Trapping phenomena in silicon-based nanocrystalline semiconductors Ciurea ML, Iancu V, Mitroi MR |
1338 - 1343 |
Gate dielectric materials for high-mobility organic transistors of molecular semiconductor crystals Takeya J, Yamagishi M, Tominarl Y, Nakazawa Y |
1344 - 1350 |
Simple models for electron and spin transport in barrier-conductor-barrier devices Zhang XG, Wang Y, Han XF |
1351 - 1359 |
Enhanced light extraction efficiency by surface lattice arrays using blue InGaN/GaN multiple quantum wells Wu GM, You ZD |
1360 - 1366 |
Energy-filtered X-ray photoemission electron microscopy and its applications to surface and organic materials Tsutsumi T, Miyamoto T, Niimi H, Kitajima Y, Sakai Y, Kato M, Naito T, Asakura K |
1367 - 1375 |
Analysis of improved photovoltaic properties of pentacene/C-60 organic solar cells: Effects of exciton blocking layer thickness and thermal annealing Yoo S, Potscavage WJ, Domercq B, Han SH, Li TD, Jones SC, Szoszklewicz R, Levi D, Riedo E, Marder SR, Kippelen B |
1376 - 1380 |
Material and structural criteria for ultra-fast Kerr nonlinear switching in optical resonant cavities Ikeda K, Fainman Y |
1381 - 1386 |
Focusing a beam of light with left-handed metamaterials Pinchuk AO, Schatz GC |
1387 - 1390 |
Impact of electronic density of states on electroluminescence refrigeration Yu SQ, Wang JB, Ding D, Johnson SR, Vasileska D, Zhang YH |
1391 - 1397 |
High aspect ratio cylindrical nanopores in silicon-on-insulator substrates Petrossian L, Wilk SJ, Joshi P, Hihath S, Posner JD, Goodnick SM, Thornton TJ |
1398 - 1404 |
On the nano-hillock formation induced by slow highly charged ions on insulator surfaces Lemell C, El-Said AS, Meissl W, Gebeshuber IC, Trautmann C, Toulemonde M, Burgdorfer J, Aumayr F |
1405 - 1411 |
Doping profile dependence of the vertical impact ionization MOSFET's (I-MOS) performance Abelein U, Assmuth A, Iskra P, Schindler M, Sulima T, Eisele I |
1412 - 1417 |
Radiative line width of a single-impurity molecule in a birefringent crystal Rebane I |
1418 - 1424 |
Optical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma Miyauchi M, Miyoshi Y, Petrovic ZL, Makabe T |