Solid-State Electronics

Solid-State Electronics, Vol.52, No.11 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (28 articles)

1687 - 1690	Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(111) substrates Roucka R, Ana YJ, Chizmeshya AVG, D'Costa VR, Tolle J, Menendez J, Kouvetakis J
1691 - 1693	A poly-Si AMOLED display with high uniformity Park KC, Jeon JH, Kim YI, Choi JB, Chang YJ, Zhan ZF, Kim CW
1694 - 1702	Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology O'uchi SI, Endo K, Masahara M, Sakamoto K, Liu Y, Matsukawa T, Sekigawa T, Koike H, Suzuki E
1703 - 1709	Transport boundary condition for semiconductor structures Volovichev IN, Velazquez-Perez JE, Gurevich YG
1710 - 1716	Properties of high sensitivity ZnO surface acoustic wave sensors on SiO2/(100) Si substrates Krishnamoorthy S, Iliadis AA
1717 - 1721	Study the effect of distribution of density of states on the depletion width of organic Schottky contacts Takshi A, Mohammadi M, Madden JD
1722 - 1729	Compact model of output conductance in nanoscale bulk MOSFET based on 2D analytical calculations Weidemann M, Kloes A, Iniguez B
1730 - 1734	RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements Contopanagos H, Zacharatos F, Nassiopoulou AG
1735 - 1741	A parasitic resistance measurement method exploiting gate current-density characteristics in ultra-short Schottky-gate FETs Inoue T, Contrata W
1742 - 1750	An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters Oudir A, Mahdouani M, Bourguiga R, Pardo F, Pelouard JL
1751 - 1754	Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs Agopian PGD, Martino JA, Simoen E, Claeys C
1755 - 1765	Unified tunnelling-diffusion theory for Schottky and very thin MOS structures Racko J, Valent P, Benko P, Donoval D, Harmatha L, Pintes P, Breza J
1766 - 1772	A new approach for physical-based modelling of bipolar power semiconductor devices Chibante R, Araujo A, Carvalho A
1773 - 1777	A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET Zhang G, Yoo WJ, Ling CH
1778 - 1781	A high Schottky barrier between Ni and S-passivated n-type Si(100) surface Song G, Ali MY, Tao M
1782 - 1790	Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate Zhang Y, Li C, Chen SY, Lai HK, Kang JY
1791 - 1795	Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study Vitanov S, Palankovski V
1796 - 1801	Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation Furno E, Bertazzi F, Goano M, Ghione G, Bellotti E
1802 - 1805	Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse Levinshtein ME, Ivanov PA, Mnatsakanov TT, Palmour JW, Das MK, Hull BA
1806 - 1809	Enhanced pure red electroluminescence intensity of Eu(o-BBA)(3)(phen) by red dye co-doping and inorganic semiconductor as charge carrier function layer Zhang FJ, Xu Z, Zhao SL, Wang LW, Lu LF
1810 - 1814	A quantum mechanical mobility model for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes Zhang YL, White MH
1815 - 1820	Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs Lee CW, Lederer D, Afzalian A, Yan R, Dehdashti N, Xiong W, Colinge JP
1821 - 1824	Long-wave (10 mu m) infrared light emitting diode device performance Das NC, Bradshaw J, Towner F, Leavitt R
1825 - 1828	Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with f(max) of 305 GHz Jin Z, Su Y, Cheng W, Liu X, Xu A, Qi M
1829 - 1832	InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material Champlain JG, Magno R, Ancona M, Newman HS, Boos JB
1833 - 1836	Bismuth doped ZnSe films fabricated on silicon substrates by pulsed laser deposition Shen YQ, Xu N, Hu W, Xu XF, Sun J, Ying ZF, Wu JD
1837 - 1837	An analytical channel thermal noise model for deep sub-micron MOSFETs with short channel effects (vol 51, pg 1034, 2007) Jeon J, Lee JD, Park BG, Shin H
1838 - 1838	Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory (vol 52, pg 1452, 2008) Jacob S, De Salvo B, Perniola L, Festes G, Bodnar S, Coppard R, Thiery JF, Pate-Cazal T, Bongiorno C, Lombardo S, Dufourcq J, Jalaguier E, Pedron T, Boulanger F, Deleonibus S