| 1149 - 1153 |
Growth of ZnO:Al films by RF sputtering at room temperature for solar cell applications
Wang ZA, Chu JB, Zhu HB, Sun Z, Chen YW, Huang SM |
| 1154 - 1158 |
The effect of rubidium chloride on properties of organic light-emitting diodes
Lu ZY, Deng ZB, Du HL, Li DG, Zou Y, Xu DH, Chen Z, Wang YS |
| 1159 - 1164 |
Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
Toko K, Nakao I, Sadoh T, Noguchi T, Miyao M |
| 1165 - 1168 |
Charge transfer and trapping properties in polymer gate dielectrics for non-volatile organic field-effect transistor memory applications
Baeg KJ, Noh YY, Kim DY |
| 1169 - 1172 |
71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications
Zhao F |
| 1173 - 1176 |
Transient activation model for antimony in relaxed and strained silicon
Lai Y, Bennett NS, Ahn C, Cowern NEB, Cordero N, Greer JC |
| 1177 - 1182 |
1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
Yan L, Simoen E, Olsen SH, Akheyar A, Claeys C, O'Neill AG |
| 1183 - 1185 |
Trap behaviors in AlGaN-GaN heterostructures by C-V characterization
Xie SY, Yin JY, Zhang S, Liu B, Zhou W, Feng ZH |
| 1186 - 1190 |
Electrical characteristics of MIS capacitors with multi-stack thermal-agglomerating Ge nanocrystals in SiO2/SiNx dielectrics
Lo SY, Peng CW, Hong JW |
| 1191 - 1197 |
Closed-form partitioned gate tunneling current model for NMOS devices with an ultra-thin gate oxide
Lin CH, Kuo JB |
| 1198 - 1201 |
Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1-xGex structures on Si(001) substrates
Mizutani T, Nakatsuka O, Sakai A, Kondo H, Ogawa M, Zaima S |
| 1202 - 1208 |
Multi-domain multi-level abstraction modelling of integrated power devices
Castellazzi A, Ciappa M |
| 1209 - 1209 |
Symmetric linearization method for double-gate and surrounding-gate MOSFET models (vol 53, pg 548, 2009)
Dessai G, Dey A, Gildenblat G, Smit GDJ |
