| 157 - 202 |
GaN-based modulation doped FETs and UV detectors
Morkoc H, Di Carlo A, Cingolani R |
| 203 - 222 |
Electrical characteristics of thin film cubic boron nitride
Mohammad SN |
| 223 - 234 |
Modelling of the hole-initiated impact ionization current in the framework of hydrodynamic equations
Lorenzini M, Van Houdt J |
| 235 - 241 |
Ultra-thin insulator covered silicon: potential barriers and tunnel currents
Mizsei J |
| 243 - 247 |
The impact of post-polysilicon gate process on ultra-thin gate oxide integrity
Ang CH, Ko LH, Lin WH, Zheng JZ |
| 249 - 253 |
A Ka-band monolithic low phase noise coplanar waveguide oscillator using InAlAs/lnGaAs HBT
Cui DL, Hsu S, Pavlidis D, Chin P, Block T |
| 255 - 261 |
Analysis of the breakdown voltage in SOI and SOS technologies
Roig J, Vellvehi M, Flores D, Rebollo J, Millan J, Krishnan S, De Souza MM, Narayanan EMS |
| 263 - 267 |
Gate coupled and zener diode triggering silicon-controlled rectifiers for electrostatic discharge protection circuits
Jang SL, Li SH |
| 269 - 277 |
Comparison of deep levels spectra and electrical properties of GaAs crystals grown by vertical Bridgeman and by liquid encapsulated Czochralski methods
Markov AV, Polyakov AY, Smirnov NB, Bolsheva YN, Govorkov AV, Sharonov BN |
| 279 - 285 |
Gate polarity dependence of impact ionization probabilities in metal-oxide-silicon structures under Fowler-Nordheim stress
Samanta P, Sarkar CK |
| 287 - 294 |
Experimental studies of frequency response of small-signal MOSFET amplifiers
Vernon E, Bryson D, Orr ES, Mohammad SN |
| 295 - 300 |
A small sized lateral trench electrode IGBT for improving latch-up and breakdown characteristics
Kang EG, Sung MY |
| 301 - 306 |
An investigation of structural, optical and electrical properties of GaN thin films grown on Si(111) by reaction evaporation
Zhang HX, Ye ZZ, Zhao BH |
| 307 - 312 |
An improved regulated cascode current mirror
Sarao J, Wang ZJ, Wu YL, Kwok HL |
