Solid-State Electronics

Solid-State Electronics, Vol.48, No.2 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (25 articles)

197 - 205	Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells Stem N, Cid M
207 - 215	Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation Chang ST, Liu CW, Lu SC
217 - 223	A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors Kuntman A, Ardali A, Kuntman H, Kacar F
225 - 230	2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substrates Jankovic ND, O'Neill A
231 - 238	Schottky diode back contacts for high frequency capacitance studies on semiconductors Mallik K, Falster RJ, Wilshaw PR
239 - 243	Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS Kim K, Chuang CT, Rim K, Joshi RV
245 - 252	A 200 V silicon-on-sapphire LDMOS structure with a step oxide extended field plate Roig J, Flores D, Rebollo J, Hidalgo S, Millan J
253 - 257	Analysis and design criteria for traveling-wave MESFET Kaddour M, Gharsallah A, Gharbi A, Baudrand H
259 - 270	A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits Yang JW, Fossum JG, Workman GO, Huang CL
271 - 276	Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes Kuzmik J, Pogany D, Gornik E, Javorka P, Kordos P
277 - 284	Performance evaluation of SiGe heterojunction bipolar transistors on virtual substrates Jankovic ND, O'Neill A
285 - 289	High frequency C-V study of devices based on diamond-like carbon films Cheng X, Chen C, Zhou HW
291 - 296	Nitrogen activated bowing parameter of GaAs1-xNx (x <= 1%) obtained from photoreflectance spectra Khan A, Nelson N, Griffin JA, Smith DJ, Steiner T, Mohammad SN
297 - 308	The impact of the distributed RC effect on high frequency noise modeling of bipolar transistor Lee WK, Man TY, Mok PKT, Ko PK, Chan M
309 - 314	Thin film transistors on nanocrystalline silicon directly deposited by a microwave plasma CVD Teng LH, Anderson WA
315 - 320	DC and RF characteristics of RPCVD grown modulation doped Si0.8Ge0.2 pMOSFETs Song YJ, Kim SH, Lee SH, Bae HC, Kang JY, Shim KH, Kim JH, Song JI
321 - 326	Nonlinear effects in Schottky junction under a periodic reverse bias with large amplitude Los AV, Mazzola MS
327 - 333	A comprehensive and analytical drain current model for pocket-implanted NMOSFETs Ho CS, Liou JJ, Chu G, Liu YC
335 - 338	Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts Tao M, Udeshi D, Agarwal S, Maldonado E, Kirk WP
339 - 343	A doping concentration-dependent upper limit of the breakdown voltage-cutoff frequency product in Si bipolar transistors Rieh JS, Jagannathan B, Greenberg D, Freeman G, Subbanna S
345 - 349	Evaluation of performance degradation factors for high-k gate dielectrics in N-channel MOSFETs Ohata A
351 - 353	AlGaN/GaN HEMT based liquid sensors Mehandru R, Luo B, Kang BS, Kim J, Ren F, Pearton SJ, Pan CC, Chen GT, Chyi JI
355 - 358	Small signal measurement of SC2O3AlGaN/GaN moshemts Luo B, Mehandru R, Kang BS, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie JK, Jenkins T, Sewell J, Via D, Crespo A
359 - 361	2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier Irokawa Y, Luo B, Kang BS, Kim J, LaRoche JR, Ren F, Baik KH, Pearton SJ, Pan CC, Chen GT, Chyi JI, Park SS, Park YJ
363 - 366	Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors Hwang JH, Schaff WJ, Green BM, Cha HY, Eastman LF