Solid-State Electronics

Solid-State Electronics, Vol.51, No.2 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (21 articles)

187 - 187	Papers selected from the EUROSOI06 Conference - Foreword Clerc R, Faynot O, Kernevez N
188 - 194	Physical insights on nanoscale multi-gate CMOS design Fossum JG
195 - 211	Advanced BCD technology for automotive, audio and power applications Wessels P, Swanenberg M, van Zwol H, Krabbenborg B, Boezen H, Berkhout M, Grakist A
212 - 218	Nonclassical devices in SOI: Genuine or copyright from III-V Luryi S, Zaslavsky A
219 - 225	Measurement of in-plane and depth strain profiles in strained-Si substrates Ogura A, Kosemura D, Yamasaki K, Tanaka S, Kakemura Y, Kitano A, Hirosawa I
226 - 230	Uniaxially strained silicon by wafer bonding and layer transfer Himcinschi C, Radu I, Muster F, Singh R, Reiche M, Petzold M, Gosele U, Christiansen SH
231 - 238	Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization Chung TM, Olbrechts B, Sodervall U, Bengtsson S, Flandre D, Raskin JP
239 - 244	Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects Eminente S, Cristoloveanu S, Clerc R, Ohata A, Ghibaudo G
245 - 251	Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method Ohata A, Casse M, Cristoloveanu S
252 - 259	Transition from partial to full depletion in advanced SOI MOSFETs: Impact of channel length and temperature Zaouia S, Cristoloveanu S, Sureddin M, Goktepeli S, Perera AH
260 - 267	The low-frequency noise behaviour of graded-channel SOI nMOSFETs Simoen E, Claeys C, Chung TM, Flandre D, Pavanello MA, Martino JA, Raskin JP
268 - 277	Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOICMOS transistors Ioannou DP, Ioannou DE
278 - 284	Thin film fully-depleted SOI four-gate transistors Akarvardar K, Cristoloveanu S, Bawedin M, Gentil P, Blalock BJ, Flandre D
285 - 291	Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C
292 - 298	Low frequency noise in multi-gate SOICMOS devices Zafari L, Jomaah J, Ghibaudo G
299 - 305	Volume inversion mobility in SOI MOSFETs for different thin body orientations Sverdlov V, Ungersboeck E, Kosina H, Selberherr S
306 - 319	An electron injection model for time-dependent simulators of nanoscale devices with electron confinement: Application to the comparison of the intrinsic noise of 3D-, 2D- and 1D-ballistic transistors Oriols X, Fernandez-Diaz E, Alvarez A, Alarcon A
320 - 327	Scaling issues for analogue circuits using Double Gate SOI transistors Lim TC, Armstrong GA
328 - 332	MEMS on cavity-SOI wafers Luoto H, Henttinen K, Suni T, Dekker J, Makinen J, Torkkeli A
333 - 336	Towards Si-based photonic circuits: Integrating photonic crystals in silicon-on-insulator platforms Kocher G, Khunsin W, Arpiainen S, Romero-Vivas J, Romanov SG, Ye J, Lange B, Jonsson F, Zentel R, Ahopelto J, Torres CMS
337 - 342	Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodiodes Afzalian A, Flandre D