Solid-State Electronics

Solid-State Electronics, Vol.53, No.2 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (24 articles)

117 - 119	Maximum powers of low-loss series-shunt FET RF switches Yang Z, Hu X, Yang J, Simin G, Shur M, Gaska R
120 - 123	Red electroluminescent devices based on rubrene derivative in 4,4'-N,N'-dicarubreneazole-biphenyl host and its application in white light emitting device for lighting purpose Li TL, Li WL, Li X, Han LL, Chu B, Li MT, Hu ZZ, Zhang ZQ
124 - 126	A novel vertical channel self-aligned split-gate flash memory Wu DK, Zhou FL, Huang R, Li Y, Cai YM, Guo A, Zhang X, Wang YY
127 - 133	Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET Cathignol A, Bordez S, Cros A, Rochereau K, Ghibaudo G
134 - 139	Raman study of GaAs/Ga1-xAlxAs quantum dots: A dielectric continuum approach Zhong QH, Liu CH
140 - 144	An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective mass Yuan Y, Yu B, Song J, Taur Y
145 - 149	Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements Torres-Rios E, Torres-Torres R, Gutierrez EA
150 - 153	Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs Na KI, Cristoloveanu S, Bae YH, Patruno P, Xiong W, Lee JH
154 - 159	Application of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTs Chen KS, Chang EY, Lin CC, Lee CS
160 - 165	New modes of THz generation by low-temperature-grown GaAsSb Hargreaves S, Bignell LJ, Lewis RA, Sigmund J, Hartnagel HL
166 - 169	Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs Torma PT, Svensk O, Ali M, Suihkonen S, Sopanen M, Odnoblyudov MA, Bougrov VE
170 - 175	A model for the C-V characteristics of the metal-ferroelectric-insulator-semiconductor structure Zhang JJ, Sun J, Zheng XJ
176 - 180	Efficient electron transfers in ZnO nanorod arrays with N719 dye for hybrid solar cells Thitima R, Patcharee C, Takashi S, Susumu Y
181 - 184	RF performance of GaAs pHEMT switches with various upper/lower delta-doped ratio designs Chiu HC, Fu JS, Chen CW
185 - 189	Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs Xiao DP, Schreurs D, De Raedt W, Derluyn J, Germain M, Nauwelaers B, Borghs G
190 - 194	On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) Chen TP, Lee CJ, Lour WS, Guo DF, Tsai JH, Liu WC
195 - 203	Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel-Poon models Lou LF, Liou JJ, Dong SR, Han Y
204 - 210	Passivation of 4H-SiC Schottky barrier diodes using aluminum based dielectrics Kumta A, Rusli, Xia JH
211 - 217	Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene-phenylene based light emitting diodes Romero B, Arredondo B, Alvarez AL, Mallavia R, Salinas A, Quintana X, Oton JM
218 - 224	A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs Hariharan V, Vasi J, Rao VR
225 - 233	Drain bias dependent bias temperature stress instability in a-Si:H TFT Tang Z, Park MS, Jin SH, Wie CR
234 - 240	Parameter determination of Schottky-barrier diode model using differential evolution Wang KE, Ye MY
241 - 245	Photocapacitance study at p-i-n photodiode by numerical C-V integration Kavasoglu AS, Kavasoglu N, Oktik S
246 - 250	Organic thin-film transistor performance improvement using ammonia (NH3) plasma treatment on the gate insulator surface Fan CL, Yang TH, Chiu PC, Huang CH, Lin CI