Solid-State Electronics

Solid-State Electronics, Vol.44, No.3 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (24 articles)

383 - 392	Effect of nonlinear physical phenomena on the photovoltaic effect in silicon p(+)-n-n(+) solar cells Mnatsakanov TT, Shuman VB, Pomortseva LI, Schroder D, Schlogl A
393 - 399	Improvement of sheet resistance and gate oxide integrity using phosphorus ion implantation in tungsten polycide gate Cho WJ, Hong JE, Jin WH, Lee KS, Rha SK, Kim SK
401 - 407	Effective density-of-states approach to QM correction in MOS structures Ma YT, Li ZJ, Liu LT, Tian LL, Yu ZP
409 - 418	An explicit surface-potential-based MOSFET model for circuit simulation van Langevelde R, Klaassen FM
419 - 424	Self-sustained acoustoelectric and photoelectric oscillations in semiconductor-piezoelectric structures Vyun V, Kawalec A
425 - 445	Cascoded LVTSCR with tunable holding voltage for ESD protection in bulk CMOS technology without latchup danger Ker MD, Chang HH
447 - 450	Effect of oxygen plasma on the electrical characteristics of GaAs MESFETs Kumar V, Baby A, Dhanavantri C, Singh JK, Singh BR
451 - 455	Concentric ring contacts used for the determination of contact resistances Rechid J, Heime K
457 - 463	High concentration impurity diffusion profile model Suzuki K
465 - 470	Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide DeVittorio M, Coli G, Rinaldi R, Gigli G, Cingolani R, De Salvador D, Berti M, Drigo A, Fucilli F, Ligonzo T, Augelli V, Rizzi A, Lantier R, Freundt D, Luth H, Neubauer B, Gerthsen D
471 - 476	Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si Persson C, Lindefelt U, Sernelius BE
477 - 485	Dynamic avalanche in Si power diodes and impact ionization at the nn(+) junction Domeij M, Breitholtz B, Lutz J, Ostling M
487 - 499	A physics-based short-channel SOI MOSFET model for fully-depleted single drain and LDD devices Chyau CG, Jang SL, Sheu CJ
501 - 507	Pseudopotential calculations of electronic properties of Ga1-xInxN alloys with zinc-blende structure Kassali K, Bouarissa N
509 - 513	Surface potential mapping: comparison of the vibrating capacitor and the SPV method Mizsei J
515 - 520	On the determination of interface state density in n-InP Schottky structures by current-voltage measurements - Comparison with DLTS results Ahaitouf A, Losson E, Bath A
521 - 525	Soft breakdown in very thin Ta2O5 gate dielectric layers Houssa M, Mertens PW, Heyns MM, Jeon JS, Halliyal A, Ogle B
527 - 534	Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses Xu JP, Lai PT, Cheng YC
535 - 540	High gain gate/body tied NMOSFET photo-detector on SOI substrate for low power applications Zhang WQ, Chan MS, Huang R, Ko PK
541 - 548	A semi-empirical model for the AlGaAs/GaAs HBT long-term current instability Zhou W, Liou JJ, Huang CI
549 - 554	A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget Grahn JV, Fosshaug H, Jargelius M, Jonsson P, Linder M, Malm BG, Mohadjeri B, Pejnefors J, Radamson HH, Sanden M, Wang YB, Landgren G, Ostling M
555 - 558	Rectifying properties of solid C-60/n-GaN, C-70/n-GaN and C-70/p-GaN heterojunctions Sun WH, Chen KM, Wu K, Li CY, Zhang QL, Zhou XH, Gu ZN, Qin GG
559 - 563	The effect of carbon content on the minority carrier lifetime in lattice-matched p(+)-Si/p-SiGeC/n-Si/n(+)-Si diodes Shivaram R, Niu GF, Cressler JD, Croke ET
565 - 569	A poly(acetoxy-p-phenylene vinylene) based diode with a soft breakdown behaviour de Lima JR, Peres LO, Garcia JR, Gruber J, Hummelgen IA