| 367 - 371 |
Directional effects on bound quantum states for trench oxide quantum wires on (100)-silicon
Trellakis A, Ravaioli U |
| 373 - 377 |
Photoconductivity spectra from n-doped GaN: evidence for two distinct types of donors
Khan F, Brown SA, Liu A, Gourley S, Christie V, Dickie O, Reeves RJ |
| 379 - 387 |
Evaluation of heterojunction MOSFETs using UHVCVD deposited tensile-strained Si1-yCy alloy layers
Quinones E, Onsongo D, Shi Z, Banerjee SK |
| 389 - 399 |
Determination of film and surface recombination in thin-film SOI devices using gated-diode technique
Rudenko T, Rudenko A, Kilchytska V, Cristoloveanu S, Ernst T, Colinge JP, Dessard V, Flandre D |
| 401 - 408 |
Computer simulation study on the noise and millimeter wave properties of InP/GaInAs heterojunction double avalanche region IMPATT diode
Mishra JK, Dash GN, Pattanaik SR, Mishra IP |
| 409 - 414 |
Low temperature saturation of p-n junction laser beam induced current signals
Redfern DA, Fang W, Ito K, Musca CA, Dell JM, Faraone L |
| 415 - 426 |
Analytical heat flow modeling of silicon-on-insulator devices
Cheng MC, Yu FX, Habitz P, Ahmadi G |
| 427 - 435 |
An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs
Pregaldiny F, Lallement C, van Langevelde R, Mathiot D |
| 437 - 443 |
A new simplified analytical short-channel threshold voltage model for InAlAs/InGaAs heterostructure InP based pulsed doped HEMT
Gupta R, Gupta M, Gupta RS |
| 445 - 452 |
Occurrence of giant current fluctuations in 2D tunnel junction arrays
Cordan AS |
| 453 - 459 |
Simulation of the substrate current in MOSFETs using a unified model for the Auger generation and recombination rate
Ishihara T, Enda T, Matsuzawa K |
| 461 - 470 |
Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode
Srivastava S, Roenker KP |
| 471 - 475 |
Co-60 gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs
Aktas O, Kuliev A, Kumar V, Schwindt R, Toshkov S, Costescu D, Stubbins J, Adesida I |
| 477 - 482 |
Exoelectron emission studies of trap spectrum in ultrathin amorphous Si3N4 films
Naich M, Rosenman G, Roizin Y, Molotskii M |
| 483 - 485 |
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
Kuo HC, Chang YS, Lai FY, Hseuh TH, Chu LT, Laih LH, Wang SC |
| 487 - 490 |
Dipole screening regime for pyroelectric and ferroelectric films and grains in semiconductor matrix
Dmitriev AP, Kachorovskii VY, Shur MS |
| 491 - 493 |
Fast switch-off of high voltage 4H-SiC npn bipolar junction transistor from deep saturation regime
Levinshtein ME, Ivanov PA, Agarwal AK, Palmour JW |
