Solid-State Electronics

Solid-State Electronics, Vol.49, No.3 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (33 articles)

283 - 293	Interfaces and defects of high-K oxides on silicon Robertson J
295 - 300	Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches Hsin YM, Tang WB, Hsu HT
301 - 309	Temperature dependence on electrical characteristics of short geometry poly-crystalline silicon thin film transistor Sehgal A, Mangla T, Gupta M, Gupta RS
311 - 315	Recombination efficiency in bilayer organic light-emitting diode Mazhari B
317 - 322	A new scaling theory for fully-depleted SOI double-gate MOSFET's: including effective conducting path effect (ECPE) Chiang TK
323 - 327	A precision physical model for three terminal diffused or ion-implanted resistors Qian MR, Wang DZ
329 - 341	On the optimization and design of SiGeHBT cascode low-noise amplifiers Liang QQ, Niu GF, Cressler JD, Taylor S, Harame DL
343 - 349	Photocapacitance of GaAs thin-film epitaxial structures Gorev NB, Kodzhespirova IF, Privalov EN, Khuchua N, Khvedelidze L, Shur MS
351 - 356	A new constant-current technique for MOSFET parameter extraction Lu CY, Cooper JA
357 - 361	Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application Tsai JH, Zhu KP, Chu YC, Chiu SY
363 - 367	A new LIGBT structure to suppress substrate currents in a junction isolated technology Bakeroot B, Doutreloigne J, Moens P
369 - 376	Structural and electrical properties of SiO2 films deposited on Si substrates from tetraethoxysilane/oxygen plasmas Goghero D, Goullet A, Landesman JP
377 - 383	Body-tied triple-gate NMOSFET fabrication using bulk Si wafer Park TS, Choi SY, Lee DH, Chung UI, Moon JT, Yoon E, Lee JH
385 - 397	New varactors and high-power high-frequency capacitive devices Hoffe VM, Chikichev SI
399 - 403	A parametric study for Si p(+)nn(+) diodes in picosecond closing switch applications Zhang F, Yu W, Li CF, Sun XW
405 - 408	Giant suppression of avalanche noise in GaN double-drift impact diodes Reklaitis A, Reggiani L
409 - 412	Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNx Jin Z, Neumann S, Prost W, Tegude F
413 - 419	A study of remote plasma nitrided nGaAs/Au Schottky barrier Arnbrico M, Losurdo M, Capezzuto P, Bruno G, Ligonzo T, Schiavulli L, Farella I, Augelli V
421 - 429	Thermally-driven motion of current filaments in ESD protection devices Pogany D, Bychikhin S, Denison M, Rodin P, Jensen N, Groos G, Stecher M, Gornik E
431 - 436	Characterization of sub-100 nm CMOS process using screening experiment technique Srinivasaiah HC, Bhat N
437 - 444	Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations Chang SC, Wang SJ, Uang KM, Liou BW
445 - 448	Polymeric integrated AC follower circuit with a JFET as an active device Liu YX, Cui TH
449 - 452	Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation Mahapatra R, Maikap S, Kar GS, Ray SK
453 - 458	Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG
459 - 463	Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts Su YK, Chang PC, Chen CH, Chang SJ, Yu CL, Lee CT, Lee HY, Gong J, Chen PC, Wang CH
465 - 472	Extraction of non-ideal junction model parameters from the explicit analytic solutions of its I-V characteristics Ortiz-Conde A, Sanchez FJG
473 - 478	Modeling of single-pi equivalent circuit for on-chip spiral inductors Huang FY, Jiang N, Bian EL
479 - 483	Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs An X, Huang R, Zhang X, Wang YY
485 - 489	A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism Sallese JM, Krurnmenacher F, Pregaldiny F, Lallement C, Roy A, Enz C
491 - 496	Effective resistivity of fully-processed SOI substrates Lederer D, Raskin JP
497 - 504	Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching process Shim SI, Kwon YS, Kim SI, Kim YT, Park JH
505 - 511	Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices Cui Z, Liou JJ, Yue Y, Wong H
513 - 515	Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors Tassis DH, Hastas NA, Dialitriadis CA, Kamarinos G