Solid-State Electronics

Solid-State Electronics, Vol.52, No.3 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (27 articles)

341 - 341	Untitled Fortunato G
342 - 347	Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation Ma MW, Chen CY, Su CJ, Wu WC, Yang TY, Kao KH, Chao TS, Lei TF
348 - 352	Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic Pecora A, Maiolo L, Cuscuna M, Simeone D, Minotti A, Mariucci L, Fortunato G
353 - 358	Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization Ishihara R, Rana V, He M, Hiroshima Y, Inoue S, Metselaar W, Beenakker K
359 - 364	Progress in fabrication processing of thin film transistors Yoshioka K, Sameshima T, Sano N
365 - 371	High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization Tsai CC, Lee YJ, Wang JL, Wei KF, Lee IC, Chen CC, Cheng HC
372 - 376	Three-dimensionally stacked poly-Si TFT CMOS inverter with high quality laser crystallized channel on Si substrate Oh SY, Ahn CG, Yang JH, Cho WJ, Lee WH, Koo HM, Lee SJ
377 - 380	Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet Okada T, Higashi S, Kaku H, Yorimoto T, Murakami H, Miyazaki S
381 - 387	Role of hydrogen in excimer laser annealing of hydrogen-modulation doped a-Si film Heya A, Matsuo N, Serikawa T, Kawamoto N
388 - 393	Hot-carrier stress induced degradation of SLS ELA polysilicon TFTs -Effects of gate width variation and device orientation Kontogiannopoulos GP, Farmakis FV, Kouvatsos DN, Papaloannou GJ, Voutsas AT
394 - 399	Investigation of the undershoot effect in polycrystalline silicon thin film transistors Michalas L, Papaioannou GJ, Kouvatsos DN, Voutsas AT
400 - 405	Universal compact model for long- and short-channel Thin-Film Transistors Iniguez B, Picos R, Veksler D, Koudymov A, Shur MS, Ytterdal T, Jackson W
406 - 411	Electrical instability in self-aligned p-channel polysilicon TFTs related to damaged regions present at the gate edges Rapisarda M, Mariucci L, Valletta A, Pecora A, Fortunato G, Caligiore C, Fontana E, Leonardi S, Tramontana F
412 - 416	Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer Mariucci L, Simeone D, Cipolloni S, Maijo L, Pecora A, Fortunato G, Brotherton S
417 - 421	OFET for gas sensing based on SuMBE grown pentacene films Toccoli T, Pallaoro A, Tonezzer M, Coppede N, Iannotta S
422 - 426	Critical issues in plasma deposition of microcrystalline silicon for thin film transistors Cabarrocas PRI, Djeridane Y, Bui VD, Bonnassieux Y, Abramov A
427 - 431	All hot wire CVD TFTs with high deposition rate silicon nitride (3 nm/s) Schropp REI, Nishizaki S, Houweling ZS, Verlaan V, van der Werf CHM, Matsumura H
432 - 435	Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors Oudwan M, Abramov A, Cabarrocas PRI, Templier F
436 - 442	Specific spice modeling of microcrystalline silicon TFTs Moustapha O, Bui VD, Bonnassieux Y, Parey JY
443 - 448	High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors Fortunato E, Barquinha P, Goncalves G, Pereira L, Martins R
449 - 454	Source-gated thin-film transistors Shannon JM, Balon F
455 - 461	Area laser crystallized LTPS TFTs with implanted contacts for active matrix OLED displays Persidis E, Baur H, Pieralisi F, Schalberger P, Fruehauf N
462 - 466	New PMOS LTPS-TFT pixel for AMOLED to suppress the hysteresis effect on OLED current by employing a reset voltage driving Lee JH, Park SG, Han SM, Han MK, Park KC
467 - 472	Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch Lee JH, Park HS, Jeon JH, Han MK
473 - 477	Mechanical stability of poly-Si TFT on metal foil Cheon JH, Bae JH, Jang J
478 - 481	A coplanar hydrogenated amorphous silicon thin-film transistor for controlling backlight brightness of liquid-crystal display Kim SH, Kim EB, Choi HY, Kang MH, Hur JH, Jang J
482 - 486	Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon Oh JH, Ahn KW, Kang DH, Park WH, Jang J, Chang YJ, Choi JB, Min HK, Kim CW