Solid-State Electronics

Solid-State Electronics, Vol.54, No.3 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (20 articles)

221 - 225	Open-circuit voltages: Theoretical and experimental optimizations of rear passivated silicon solar cells using Fz and Cz wafers Stem N, Ramos CAS, Cid M
226 - 230	Influence of gate misalignment on the electrical characteristics of MuGFETS Lee CW, Afzalian A, Ferain I, Yan R, Akhavan ND, Xiong WZ, Colinge JP
231 - 234	A low insertion loss GaAs pHEMT switch utilizing dual n(+)-doping AlAs etching stop layers design Chien FT, Lin DW, Yang CW, Fu JS, Chiu HC
235 - 242	Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics Torres-Torres R, Venegas R, Decoutere S
243 - 251	Quantitative prediction of junction leakage in bulk-technology CMOS devices Duffy R, Heringa A, Venezia VC, Loo J, Verheijen MA, Hopstaken MJP, van der Tak K, de Potter M, Hooker JC, Meunier-Beillard P, Delhougne R
252 - 258	Capacitances in micro-strip detectors: A conformal mapping approach Cattaneo PW
259 - 267	Capacitance-voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs Tang Z, Wie CR
268 - 274	Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations Jankovic N, Igic P, Sakurai N
275 - 278	Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor Tsai JH, Lour WS, Huang CH, Dale NF, Lee YH, Sheng JS, Liu WC
279 - 282	Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts Chen LY, Cheng SY, Huang CC, Chen TP, Tsai TH, Liu YJ, Chen TY, Hsu CH, Liu WC
283 - 287	Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design Wang P, Cao B, Wei W, Gan ZY, Liu S
288 - 293	J-V characteristics of GaN containing traps at several discrete energy levels Jain A, Kumar P, Jain SC, Muralidharan R, Chand S, Kumar V
294 - 298	Power added efficiency and linearity tradeoffs in GaN and GaAs microwave power HEMTs Okayama T, Rao MV
299 - 302	High performance pMOS circuits with silicon-on-glass TFTs Kim JI, Choi JW, Choi W, Mativenga M, Jang J, Williams CK, Wang CC, Mozdy E, Cites J, Lai J, Tredwell TJ
303 - 306	Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer Juang MH, Chang CW, Huang CW, Wang JL, Shye DC, Hwang CC, Jang SL
307 - 315	Parameter set and data sampling strategy for accurate yet efficient statistical MOSFET compact model extraction Bindu B, Cheng B, Roy G, Wang X, Roy S, Asenov A
316 - 322	Role of the substrate during pseudo-MOSFET drain current transients Park K, Nayak P, Schroder DK
323 - 326	Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment Park DJ, Lim JW, Park BO
327 - 335	The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs Alatise OM, Kwa KSK, Olsen SH, O'Neill AG
336 - 342	Silicon on insulator MESFETs for RF amplifiers Wilk SJ, Balijepalli A, Ervin J, Lepkowski W, Thornton TJ