| 539 - 539 |
Special issue - Proceedings of the EUROSOI-2000 (European Meeting on Silicon-On-Insulator Devices) - Granada. Spain - 26-27 October 2000 -Foreword
Gamiz F, Lopez-Villanueva JA |
| 541 - 549 |
Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems
Flandre D, Adriaensen S, Akheyar A, Crahay A, Demeus L, Delatte P, Dessard V, Iniguez B, Neve A, Katschmarskyj B, Loumaye P, Laconte J, Martinez I, Picun G, Rauly E, Renaux C, Spote D, Zitout M, Dehan M, Parvais B, Simon P, Vanhoenacker D, Raskin JP |
| 551 - 557 |
Silicon-on-insulator substrates with buried tungsten silicide layer
Gamble HS, Armstrong BM, Baine P, Bain M, McNeill DW |
| 559 - 566 |
From SOI materials to innovative devices
Allibert F, Ernst T, Pretet J, Hefyene N, Perret C, Zaslavsky A, Cristoloveanu S |
| 567 - 573 |
High frequency properties of silicon-on-insulator and novel depleted silicon materials
Johansson M, Berg J, Bengtsson S |
| 575 - 584 |
Thermally activated processes in the buried oxide of SIMOX SOI structures and devices
Lysenko VS, Nazarov AN, Kilchytska VI, Osiyuk IN, Tyagulski IP, Gomeniuk YV, Barchuk IP |
| 585 - 592 |
Charge based modeling of the inner fringing capacitance of SOI-MOSFETs
Wiatr M, Seegebrecht P, Peters H |
| 593 - 598 |
Threshold voltage model for deep-submicron fully depleted SOICMOS transistors including the effect of source/drain fringing fields into the buried oxide
van Meer H, De Meyer K |
| 599 - 605 |
Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI
Faynot O, Poiroux T, Pelloie JL |
| 607 - 611 |
Quantum-mechanical effects in SOI devices
Majkusiak B |
| 613 - 620 |
Electron transport in silicon-on-insulator devices
Gamiz F, Roldan JB, Lopez-Villanueva JA, Cartujo-Cassinello P, Carceller JE, Cartujo P, Jimenez-Molinos F |
| 621 - 627 |
Influence of generation/recombination effects in simulations of partially depleted SOI MOSFETs
Gritsch M, Kosina H, Grasser T, Selberherr S |
| 629 - 632 |
Integration of high voltage devices on thick SOI substrates for automotive applications
Heinle U, Olsson J |
