Solid-State Electronics

Solid-State Electronics, Vol.49, No.4 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (24 articles)

517 - 523	A compact model describing the effect of p-buffer layer on the I-V characteristics of 4H-SiC power MESFETs Yang LN, Zhang YM, Yu CL
524 - 528	Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates Maikap S, Lee JH, Mahapatra R, Pal S, No YS, Choi WK, Ray SK, Kim DY
529 - 534	Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy Waite AM, Lloyd NS, Osman K, Zhang W, Ernst T, Achard H, Wang Y, Deleonibus S, Hernment PLF, Bagnall DM, Evans AGR, Ashburn P
535 - 544	Physical study of the avalanche breakdown phenomenon in HEMTs Elkhou M, Rousseau M, Gerard H, De Jaeger JC
545 - 553	Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC Rudenko TE, Osiyuk IN, Tyagulski IP, Olafsson HO, Sveinbjornsson EO
554 - 557	Optimization of base-to-emitter spacer thickness to maximize the frequency response of bipolar transistors Lee WK, Chan ACK, Chan M
558 - 561	A semi-empirical approach to study a high performance Poly-Si TFT with selectively floating a : Si layer Bindra S, Haldar S, Gupta RS
562 - 566	DC conduction properties of Gadolinium-Indium oxide films deposited on Si(100) Dakhel AA
567 - 577	Organic thin film transistors: a DC/dynamic analytical model Calvetti E, Colalongo L, Kovacs-Vajna ZM
578 - 584	Stability of hydrogenated amorphous silicon thin film transistors on polyimide substrates Kavak H, Shanks H
585 - 590	Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures Sochacki M, Kolendo A, Szmidt J, Werbowy A
591 - 594	SiGeHMOSFET monolithic inverting current mirror Michelakis K, Despotopoulos S, Papavassiliou C, Vilches A, Fobelets K, Toumazou C
595 - 605	Nanoscale CMOS: potential nonclassical technologies versus a hypothetical bulk-silicon technology Kim SH, Fossum JG
606 - 611	Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes Ru GP, Van Meirhaeghe RL, Forment S, Jiang YL, Qu XP, Zhu SY, Li BZ
612 - 617	On the significance of the surface states in isolated AlxGa1-xN/GaN heterostructures Perez JAC
618 - 627	Transient enhanced diffusion of B at low temperatures under extrinsic conditions Giles LF, Colombeau B, Cowern N, Molzer W, Schaefer H, Bach KH, Haibach P, Roozeboom F
628 - 633	Analytical modeling of a DCFL inverter using normally-off GaAs MESFET's under dark and illuminated conditions Jit S, Bandhawakar G, Pal BB
634 - 639	On functional potentiality of photodiode structures with a high-resistance layer Khudaverdyan SK, Dokholyan JG, Kocharyan AA, Kechiyantz AM, Khudaverdyan DS
640 - 647	Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs Ortiz-Conde A, Sanchez FJG, Muci J
648 - 653	A closed-form DC model for long-channel thin-film transistors with gate voltage-dependent mobility characteristics Hoffman RL
654 - 662	Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel n-MOSFETs Ahsan AKM, Schroder DK
663 - 666	Modeling the DC gain of 4H-SiC bipolar transistors as a function of surface recombination velocity Fardi HZ
667 - 669	Band offsets in heterostructures by spin splittings Ekpunobi AJ
670 - 672	AlGaN/GaN ohmic contact resistance variations across epitaxial suppliers Gillespie J, Crespo A, Fitch R, Jessen G, Via G