Solid-State Electronics

Solid-State Electronics, Vol.54, No.4 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (29 articles)

343 - 348	A concisely asymmetric modeling of double-pi equivalent circuit for on-chip spiral inductors Yu L, Tang Y, Wang Y
349 - 352	Electroplex emission of the blend film of PVK and DPVBi Li JM, Xu Z, Zhang FJ, Zhao SL, Song DD, Zhu HN, Song JL, Wang YS, Xu XR
353 - 356	Microwave power and simulation of S-band SiC MESFETs Chen G, Qin YF, Bai S, Wu P, Li ZY, Chen Z, Han P
357 - 361	ESD performance of 65 nm partially depleted n and p channel SOI MOSFETs Mishra R, Ioannou DE, Mitra S, Gauthier R, Seguin C, Halbach R
362 - 367	Extraction of trap energy and location from random telegraph noise in gate leakage current (I-g RTN) of metal-oxide semiconductor field effect transistor (MOSFET) Cho HJ, Lee S, Park BG, Shin H
368 - 377	A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology Weng WT, Lee YJ, Lin HC, Huang TY
378 - 381	Thermal and spectral analysis of self-heating effects in high-power LEDs Rada NM, Triplett GE
382 - 384	Solution space for the independent-gate asymmetric DGFET Dessai G, Gildenblat G
385 - 391	Robustness of Super Junction structures against cosmic ray induced breakdown Antoniou M, Udrea F, Bauer F
392 - 396	Highly durable and flexible memory based on resistance switching Kim S, Yarimaga O, Choi SJ, Choi YK
397 - 404	A comprehensive analysis on scaling prospects of dual-bit channel engineered SONOS NOR-flash EEPROM cells Datta A, Mahapatra S
405 - 409	Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement Cho KH, Kim YS, Lim J, Choi YH, Han MK
410 - 416	A flash analog to digital converter on stainless steel foil substrate Jamshidi-Roudbari A, Kuo PC, Hatalis MK
417 - 419	SixGey:H-based micro-bolometers studied in the terahertz frequency range Kosarev A, Rumyantsev S, Moreno M, Torres A, Boubanga S, Knap W
420 - 426	Modelling of the hole mobility in p-channel MOS transistors fabricated on (110) oriented silicon wafers Gaubert P, Teramoto A, Ohmi T
427 - 432	Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors Oxland RK, Paterson GW, Long AR, Rahman F
433 - 438	Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes du Plessis M, Rademeyer P
439 - 442	Storage stability improvement of pentacene thin-film transistors using polyimide passivation layer fabricated by vapor deposition polymerization Hyung GW, Park J, Kim JH, Koo JR, Kim YK
443 - 446	Novel phase-change material GeSbSe for application of three-level phase-change random access memory Gu YF, Song ZT, Zhang T, Liu B, Feng SL
447 - 451	Nanostructured morphology of P3HT:PCBM bulk heterojunction solar cells Kalita G, Masahiro M, Koichi W, Umeno M
452 - 456	The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time Zhao Y, Lv ZY, Li Z, Liang XY, Min JH, Wang LJ, Shi WM, Liu YY
457 - 460	A C-band GaN based linear power amplifier with 55.7% PAE Luo WJ, Chen XJ, Zhang H, Liu GG, Zheng YK, Liu XY
461 - 474	Effects of switching from < 1 1 0 > to < 1 0 0 > channel orientation and tensile stress on n-channel and p-channel metal-oxide-semiconductor transistors Yang PZ, Lau WS, Lai SW, Lo VL, Siah SY, Chan L
475 - 478	Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors Lin HK, Lin YC, Huang FH, Fan TW, Chiu PC, Chyi JI, Ko CH, Kuan TM, Hsieh MK, Lee WC, Wann CH
479 - 483	Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers Zhang HZ, Cao HT, Chen AH, Liang LY, Liu ZM, Wan Q
484 - 487	Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures Yoon KM, Yang KY, Byeon KJ, Lee H
488 - 491	AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact Lee HC, Su YK, Lin JC, Cheng YC, Li TC, Chang KJ
492 - 496	1.3 mu m emitting GaInNAs/GaAs quantum well resonant cavity LEDs Montes M, Guzman A, Trampert A, Hierro A
497 - 503	A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements Lee S, Lee H, Kim S, Lee S, Shin H