Solid-State Electronics

Solid-State Electronics, Vol.44, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (19 articles)

V - V	E-MRS 1999 Spring Meeting, Strasbourg, June 1-4, 1999 - Preface Schmeisser D, Richter H, Pfitzner L, Prasad S
761 - 766	Overview of status and challenges of system testing on chip with embedded DRAMS Falter T, Richter D
767 - 774	Optimization of 0.18 mu m CMOS devices by coupled process and device simulation Burenkov A, Tietzel K, Lorenz J
775 - 782	Silicon-on-insulator: materials aspects and applications Plossl A, Krauter G
783 - 789	Tailoring dopant diffusion for advanced SiGe : C heterojunction bipolar transistors Rucker H, Heinemann B
791 - 796	Efficient backup schemes for processors in embedded systems Pflanz M, Vierhaus HT
797 - 807	Two- and three-dimensional numerical modeling of copper electroplating for advanced ULSI metallization Ritter G, McHugh P, Wilson G, Ritzdorf T
809 - 813	Nonlinear optical characterization of the surface of silicon wafers: In-situ detection of external stress Reif J, Schmid R, Schneider T, Wolfframm D
815 - 818	Reliability of built in aluminum interconnection with low-epsilon dielectric based on porous anodic alumina Lazarouk S, Katsouba S, Demianovich A, Stanovski V, Voitech S, Vysotski V, Ponomar V
819 - 824	Crystal growth under heat field rotation conditions Kokh AE, Kononova NG
825 - 830	Influence of melt convection on the interface during Czochralski crystal growth Miller W, Rehse U, Bottcher K
831 - 835	Dopant diffusion during rapid thermal oxidation Stadler A, Sulima T, Schulze J, Fink C, Kottantharayil A, Hansch W, Baumgartner H, Eisele I, Lerch W
837 - 843	A spectro-microscopic approach for spatially resolved characterisation of semiconductor structures in PEEM Hoffmann P, Mikalo RP, Schmeisser D
845 - 853	Field effect in organic devices with solution-doped arylamino-poly-(phenylene-vinylene) Scheinert S, Paasch G, Pohlmann S, Horhold HH, Stockmann R
855 - 861	Polymeric electrodes Appel G, Mikalo R, Henkel K, Oprea A, Yfantis A, Paloumpa I, Schmeisser D
863 - 868	Front-end process simulation Rafferty CS
869 - 873	An equilibrium model for buried SiGe strained layers Fischer A, Osten HJ, Richter H
875 - 880	Cross-sectional STM/STS - a useful tool for identification of dopants in silicon Nuffer R, Mussig HJ, Dabrowski J
881 - 886	Integration of quantum transport models in classical device simulators Racec PN, Wulf U, Kucera J