Solid-State Electronics

Solid-State Electronics, Vol.52, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (36 articles)

597 - 605	Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET Hank L, Sallese JM, Kayal M
606 - 611	Low-frequency noise properties of double channel AlGaN/GaN HEMTs Jha SK, Surya C, Chen KJ, Lau KM, Jelencovie E
612 - 617	Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabrication Sheoran M, Upadhyaya A, Rohatgi A
618 - 624	Solar-blind MSM-photodetectors based on AlxGa1-xN/GaN hetero structures grown by MOCVD Averine SV, Kumetzov PI, Zhitov VA, Alkeev NV
625 - 631	A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs Krokidis G, Xanthakis JP, Uzunoglu NK
632 - 636	Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs Desmaris V, Shiu JY, Rorsman N, Zirath H, Chang EY
637 - 643	Accurate thermal analysis of GaNHFETs Conway AM, Asbeck PM, Moon JS, Micovic M
644 - 648	Growth and optical properties of Zn : Ce : Cu : LiNbO3 single crystals Ma D, Wang B, Wang R, Wei Y, Liu HC, Wang H
649 - 656	Variation and mismatch effects of the low-temperature poly-Si TFTs on the circuit for the X-ray active matrix sensor Tai YH, Huang SC, Su KC, Tseng CY
657 - 662	High-performance white organic light-emitting device using non-doped-type structure Yang HS, Shi YW, Zhao Y, Liu SY
663 - 674	Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events Gendron A, Renaud P, Bafleur M, Nolhier N
675 - 678	Realizing high voltage SJ-LDMOS with non-uniform N-buried layer Chen WJ, Zhang B, Li ZJ
679 - 682	Ultraviolet Schottky detector based on epitaxial ZnO thin film Jiang DY, Zhang JY, Lu YM, Liu KW, Zhao DX, Zhang ZZ, Shen DZ, Fan XW
683 - 687	The effects of radiation-induced interface traps on base current in gated bipolar test structures Chen XJ, Barnaby HJ
688 - 694	A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation Bi X, East JR, Ravaioli U, Haddad GI
695 - 703	Subthreshold characteristics of polysilicon TFTs Deng WL, Zheng XR, Chen RS, Liu YA
704 - 710	Analytical extraction of small and large signal models for FinFET varactors Crupi G, Schreurs DMMP, Dehan M, Xiao D, Caddemi A, Mercha A, Decoutere S
711 - 724	Physics-based 1/f noise model for MOSFETs with nitrided high-kappa gate dielectrics Morshed TH, Devireddy SP, Celik-Butler Z, Shanware A, Green K, ChamberS JJ, Visokay MR, Colombo L
725 - 729	Microwave performance of field-plate 0.13-mu m MOS transistors with varying field-plate extension Chiu HC, Lin SW, Cheng CS, Wei CC
730 - 739	Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors on SOI substrates Marano I, d'Alessandro V, Rinaldi N
740 - 744	Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD Azam S, Svensson C, Wahab Q
745 - 748	High power density, high efficiency 1 W SiGe power HBT for 2.4 GHz power amplifier applications Yeh PC, Chiou HK, Lee CY, Yeh J, Tsai YH, Tang D, Chern J
749 - 755	Pressure induced, electronic and optical properties of zincblende InP Parashari SS, Kumar S, Auluck S
756 - 764	Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Zhou Y, Ahyi C, Isaacs-Smith T, Bozack M, Tin CC, Williams J, Park M, Cheng AJ, Park JH, Kim DJ, Wang D, Preble EA, Hanser A, Evans K
765 - 770	A 10 GHz low phase-noise CMOS voltage-controlled oscillator using dual-transformer technology Chiu HC, Cheng CS, Yang YT, Wei CC
771 - 774	Modeling non-quasi-static effects in channel thermal noise and induced-gate noise in MOS field-effect transistors Deshpande A, Jindal RP
775 - 781	Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J
782 - 786	Hopping photoconductivity and the effectiveness of phonon detection in GaAs : Zn bolometers Taele BM, Narayan H, Mukaro R
787 - 794	Mobility model for compact device modeling of OTFTs made with different materials Estrada M, Mejia I, Cerdeira A, Pallares J, Marsal LF, Iniguez B
795 - 800	Dynamics of AlGaN based detectors in the deep-UV Mazzeo G, Reverchon JL, Conte G, Dussaigne A, Duboz JY
801 - 807	High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs LukyanchikovA N, Garbar N, Kudina V, Smolanka A, Lokshin M, Simoen E, Claeys C
808 - 812	The effect of a smart body tie on the bottom-gate thin film transistor Lin JT, Huang KD, Hu SF
813 - 816	Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering Navamathavan R, Choi CK, Yang EJ, Lim JH, Hwang DK, Park SJ
817 - 823	Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique Lu H, Cao DS, Xiu XQ, Xie ZL, Zhang R, Zheng YD, Li ZH
824 - 829	Hot-carrier effects as a function of silicon film thickness in nanometer-scale SOI pMOSFETs Jang SJ, Ka DH, Yu CG, Cho WJ, Park JT
830 - 837	Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs Cerdeira A, Moldovan O, Iniguez B, Estrada M