Solid-State Electronics

Solid-State Electronics, Vol.54, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (22 articles)

505 - 508	E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development Lin HK, Fan DW, Lin YC, Chiu PC, Chien CY, Li PW, Chyi JI, Ko CH, Kuan TM, Hsieh MK, Lee WC, Wann CH
509 - 515	Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0001) Kissinger S, Jeong SM, Yun SH, Lee SJ, Kim DW, Lee IH, Lee CR
516 - 519	Formation of n-channel polycrystalline-Si thin-film transistors by dual source/drain implantation Juang MH, Chang CW, Wang JL, Shye DC, Hwang CC, Jang SL
520 - 523	Compact capacitance modeling of a 3-terminal FET at zero drain-source voltage Iniguez B, Moldovan O
524 - 526	Highly efficient undoped deep-blue electroluminescent device based on a novel pyrene derivative Wang ZQ, Xu C, Wang WZ, Fu WJ, Niu LB, Ji BM
527 - 529	Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs Huang HS, Wang MC, Hsieh ZY, Chen SY, Chuang AE, Liu CH
530 - 535	Explicit quantum potential and charge model for double-gate MOSFETs Chaves F, Jimenez D, Sune J
536 - 540	Junction temperature in n-ZnO nanorods/(p-4H-SiC, p-GaN, and p-Si) heterojunction light emitting diodes Alvi NH, Riaz M, Tzamalis G, Nur O, Willander M
541 - 544	Substrate-free large gap InGaN solar cells with bottom reflector Tsai CL, Liu GS, Fan GC, Lee YS
545 - 551	Analysis of subthreshold conduction in short-channel recessed source/drain UTB SOI MOSFETs Svilicic B, Jovanovic V, Suligoj T
552 - 556	An alternative passivation approach for AlGaN/GaN HEMTs Lin HK, Yu HL, Huang FH
557 - 563	Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories Jeon K, Lee S, Kim DM, Kim DH
564 - 567	Ultrathin DPN STI SiON liner for 40 nm low-power CMOS technology Hu CY, Chen JF, Chen SC, Chang SJ, Lee KM, Lee CP
568 - 574	Formation of ohmic contact by pre-annealing of shallow nanopores in macroporous silicon and its characterization Maji S, Das RD, Jana M, Roychaudhuri C, Mondal N, Dutta SK, Bandopadhyay NR, Saha H
575 - 578	Enhanced light output power of GaN-based light emitting diodes with overcut sideholes formed by wet etching Kim HK, Kim HG, Kim HY, Ryu JH, Kang JH, Han N, Uthirakumar P, Hong CH
579 - 581	Enhance the split-gate flash cell performance by partially decoupling the SG oxide thickness from the tunnel oxide thickness Dong YQ, Kong WR, Do N, Wang SL, Lee G
582 - 585	DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths Lin HK, Huang FH, Yu HL
586 - 589	Contact resistance between Au and solution-processed CNT Han SH, Lee SH, Hur JH, Jang J, Park YB, Irvin G, Drzaic P
590 - 594	Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers Fu YK, Kuo CH, Tun CJ, Chang LC
595 - 604	Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs Wu WM, Yao W, Gildenblat G
605 - 608	High efficient organic ultraviolet photovoltaic devices based on gallium complex Su ZS, Chu B, Li WL
609 - 611	Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device Hung HJ, Kuo JB, Chen D, Tsai CT, Yeh C