Solid-State Electronics

Solid-State Electronics, Vol.52, No.6 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (27 articles)

839 - 843	Physical parameters extraction from current-voltage characteristic for diodes using multiple nonlinear regression analysis Liu CC, Chen CY, Weng CY, Wang CC, Jenq FL, Cheng PJ, Wang YH, Houng MP
844 - 848	Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories Seo SH, Kim SW, Lee JU, Kang GC, Roh KS, Kim KY, Lee SY, Choi CM, Song KJ, Park SR, Park JH, Jeon KC, Kim DM, Kim DH, Shin H, Lee JD, Park BG
849 - 856	k center dot p calculations of p-type delta-doped quantum wells in Si Rodriguez-Vargas I, Mora-Ramos ME
857 - 862	Analysis of relative intensity noise in tapered grating QWS-DFB laser diodes by using three rate equations model Shahshahani F, Ahmadi V
863 - 870	A universal electron mobility model of strained Si MOSFETs based on variational wave functions Liang RR, Li DB, Xu J
871 - 876	Ferromagnetism in self-assembled Ge quantum dots material followed by Mn-implantation and annealing Yoon IT, Park CJ, Lee SW, Kang TW, Koh DW, Fu DJ
877 - 881	Fabrication of field emission display prototype utilizing printed carbon nanotubes/nanofibers emitters Guo PS, Chen T, Chen YW, Zhang ZJ, Feng T, Wang LL, Lin LF, Sun Z, Zheng ZH
882 - 885	Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process Gan KJ, Liang DS, Tsai CS, Wen CM, Chen YH
886 - 891	Substrate current characterization and optimization of high voltage LDMOS transistors Wang J, Li R, Dong YM, Zou X, Shao L, Shiau WT
892 - 898	Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour Donoval D, Vrbicky A, Marek J, Chvala A, Beno P
899 - 908	Small-signal performance and modeling of sub-50 nm nMOSFETs with f(T) above 460-GHz Dimitrov V, Heng JB, Timp K, Dimauro O, Chan R, Hafez M, Feng J, Sorsch T, Mansfield W, Miner J, Kornblit A, Klemens F, Bower J, Cirelli R, Ferry EJ, Taylor A, Feng M, Timp G
909 - 913	Normally-off 4H-SiC trench-gate MOSFETs with high mobility Wu J, Hu J, Zhao JH, Wang X, Li X, Fursin L, Burke T
914 - 918	Thin-film inverters based on high mobility microcrystalline silicon thin-film transistors Chan KY, Bunte E, Knipp D, Stiebig H
919 - 925	Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics Fregonese S, Zhuang Y, Burghartz JN
926 - 929	High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz Wang XL, Chen TS, Xiao HL, Wang CM, Hu GX, Luo WJ, Tang J, Guo LC, Li JM
930 - 936	A physical model of floating body effects in polysilicon thin film transistors Wu WJ, Yao RH, Chen T, Chen RS, Deng WL, Zheng XR
937 - 940	Multi-finger power SiGeHBTs for thermal stability enhancement over a wide biasing range Jin DY, Zhang WR, Shen P, Xie HY, Wang Y, Zhang W, He LJ, Sha YP, Li J, Gan JN
941 - 945	Field electron emission of multiwalled carbon nanotubes and carbon nanofibers grown from Camphor Somani SP, Somani PR, Yoshida A, Tanemura M, Lau SP, Umeno M
946 - 951	Improved SiGe power HBT characteristics by emitter layout Huang SC, Chang CT, Pan CT, Hsin YM
952 - 956	High stability and low driving voltage green organic light emitting diode with molybdenum oxide as buffer layer Jiang XY, Zhang ZL, Cao J, Zhu WQ
957 - 961	Low-voltage constant-g(m) rail-to-rail CMOS operational amplifier input stage Lu Y, Yao RH
962 - 967	Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching Gao HY, Yan FW, Zhang Y, Li JM, Zeng YP, Wang GH
968 - 972	Degradation of AlGaN-based ultraviolet light emitting diodes Sawyer S, Rumyantsev SL, Shur MS
973 - 979	Transport properties of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 of different thickness Kordos P, Gregusova D, Stoklas R, Gazi S, Novak J
980 - 985	Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts Hassaninia I, Sheikhi MH, Kordrostami Z
986 - 989	Study of GaN growth on ultra-thin Si membranes Wang X, Wu AM, Chen J, Wang X, Wu YX, Zhu JJ, Yang H
990 - 996	Simulation for capacitance correction from Nyquist plot of complex impedance-voltage characteristics Kavasoglu AS, Kavasoglu N, Oktik S